BFS17A Vishay, BFS17A Datasheet - Page 2

• Manufacturer Part Number: BFS17A
• Description: Silicon Npn Planar Rf Transistor
• Manufacturer: Vishay

BFS17A / BFS17AR / BFS17AW
Vishay Semiconductors
Maximum Thermal Resistance
1)
Electrical DC Characteristics
T
Electrical AC Characteristics
T
www.vishay.com
2
Junction ambient
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
DC forward current transfer ratio V
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage - two tone
intermodulation test
Third order intercept point
amb
amb
on glass fibre printed board (25 x 20 x 1.5) mm
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
1)
V
V
V
I
I
V
V
f = 300 MHz
V
f = 300 MHz
V
f = 300 MHz
V
V
V
V
Z
V
Z
V
d
f
V
f = 800 MHz
C
C
2
S
S
IM
CE
CB
EB
CE
CE
CE
CE
CE
CB
CE
EB
CE
CE
CE
CE
= 810 MHz, Z
= 1 mA, I
= 20 mA, I
= 50 Ω, f = 800 MHz
= 50 Ω, f = 800 MHz
= 60 dB, f
= 25 V, V
= 10 V, I
= 2.5 V, I
= 1 V, I
= 1 V, I
= 5 V, I
= 5 V, I
= 5 V, I
= 10 V, f = 1 MHz
= 5 V, f = 1 MHz
= 0.5 V, f = 1 MHz
= 5 V, I
= 10 V, I
= 10 V, I
= 10 V, I
Test condition
Test condition
Test condition
C
C
C
C
C
C
B
E
B
C
C
C
C
= 0
= 2 mA
= 25 mA
= 2 mA,
= 14 mA,
= 30 mA,
= 2 mA,
1
BE
3
= 0
= 2 mA
= 14 mA,
= 14 mA,
= 14 mA,
= 806 MHz,
= 0
S
plated with 35 μm Cu
= 0
= Z
L
= 50 Ω
V
Symbol
Symbol
V
V
(BR)CEO
I
I
I
1
C
G
CBO
CEsat
h
h
C
C
CES
EBO
IP
f
f
f
F
FE
FE
= V
T
T
T
eb
cb
ce
pe
3
Symbol
R
2
thJA
Min
Min
15
20
20
3
Value
23.5
Typ.
Typ.
450
100
150
0.1
1.5
3.5
3.2
0.6
0.1
1.1
2.5
13
Document Number 85039
Max
Max
100
100
150
0.6
10
Rev. 1.5, 29-Apr-05
K/W
Unit
GHz
GHz
GHz
dBm
Unit
Unit
mV
μA
nA
μA
dB
dB
pF
pF
pF
V
V