TN4Q06 Sanyo Semiconductor Corporation, TN4Q06 Datasheet

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TN4Q06

Manufacturer Part Number
TN4Q06
Description
Quasi-resonant Switching Power Supply Expd
Manufacturer
Sanyo Semiconductor Corporation
Datasheet
Ordering number : EN9028
TN4Q06
Features
Specifications
Absolute Maximum Ratings at Ta=25 C
*1 V DD =50V, L=10mH, I AV =9A
*2 L 10mH, single pulse
[The voltage parameters indicate the GND pin voltage]
Drain-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
V DD Pin Apply Voltage
FB Pin Apply Voltage
EDGE Pin Apply Voltage
Allowable Power Dissipation
Operating Temperature
Junction Temperature
Storage Temperature
Avalanche Energy (Single Pulse) *1
Avalanche Current *2
Original control IC for Quasi-resonant type.
High voltage Power MOSFET with current sense.
Low input voltage protection (Automatic reset)
Over voltage protection (Latch).
Over current protection (Pulse-by-pulse).
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
Parameter
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
SANYO Electric Co.,Ltd. Semiconductor Company
ExPD (Excellent Power Device)
Quasi-Resonant Switching
Power Supply ExPD
V EDGE
Symbol
V DSS
V DD
V FB
Topr
E AS
Tstg
I DP
I AV
P D
I D
Tj
3-5
3-5
3-5
4-5
1-5
2-5
Tc=25 C
3-5
3-5
PW 10 s, duty cycle 1%
TN4Q06
Conditions
D0505IQ MS IM TB-00001732
Ratings
--0.3 to V DD +0.3
--0.3 to V DD +0.3
--0.3 to 16.7
--25 to +125
--55 to +150
450
150
430
36
40
9
2
9
No.9028-1/4
unit
mJ
W
W
V
A
A
V
V
V
A
C
C
C

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TN4Q06 Summary of contents

Page 1

... SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN TN4Q06 ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD Symbol ...

Page 2

... Step Drive Voltage Step Drive Gate Voltage Package Dimensions unit : mm 7511A-002 3.2 10.0 0.9 0 1.27 6.5 1.27 2.54 TN4Q06 Symbol Conditions V (BR)DSS 3 =1mA =0V I DSS 3 =450V = (on) 3 =4.5A =15V Ciss V DS =20V, f=1MHz Coss V DS =20V, f=1MHz V (BR)DD 4 =1mA =0V OVP 4-5 VBon ...

Page 3

... Circuit Function Diagram Voltage resonance capacitor + OCP Input voltage compensation resistor FB / OCP adjusting resistor Delay time setting capacitor and resistor TN4Q06 Undervoltage protection Oscillator Latch circuit Burst circuit Logic Driver Name Input for feedback voltage and current sence Delay EDGE Input voltage ...

Page 4

... SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2005. Specifications and information herein are subject to change without notice. TN4Q06 2 2.0 1.5 1 ...

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