TN4Q06 Sanyo Semiconductor Corporation, TN4Q06 Datasheet - Page 2

• Manufacturer Part Number: TN4Q06
• Description: Quasi-resonant Switching Power Supply Expd
• Manufacturer: Sanyo Semiconductor Corporation

Electrical Characteristics at Ta=25 C
Package Dimensions
unit : mm
7511A-002
[MOSFET]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
[IC]
Power Supply Line Breakdown Voltage
Over Voltage Input Latch Shutdown Threshold Voltage
Burst Mode Start Threshold Voltage
Burst Mode Stop Threshold Voltage
Burst Mode Hysteresis Voltage
Low Voltage Protection Release Threshold Voltage
Low Voltage Protection Operation Threshold Voltage
(Latch Reset Threshold Voltage)
Low Voltage Protection Hysteresis Voltage
Feedback Detection Threshold Voltage
Edge Signal Release Threshold Voltage
Edge Signal Detection Threshold Voltage
Edge Signal Hysteresis Voltage
Initial Oscillation Frequency
Maximum Oscillation Frequency
Power Supply Current (at start-up)
Minimum ON Time
Step Drive Voltage
Step Drive Gate Voltage
1.27
2.54
1.27
Parameter
1 2
10.0
3
4
2.54
5
0.9
0.5
3.2
6.5
V (BR)DSS
V EDGE -H
V EDGE -L
V (BR)DD
R DS (on)
4.5
ton(min)
I DD (on)
Symbol
VGstep
V EDGE
VBon
VBoff
I DSS
Coss
OVP
UVH
fmax
tstep
Ciss
UVL
V FB
fosc
VB
UV
1.5
3.0
0.7
(0.9)
2.8
3-5 I D =1mA, V DD =0V
3-5 V DS =450V, V DD =0V
3-5 I D =4.5A, V DD =15V
4-5 I DD =1mA, V FB =0V
4-5
4-5 V EDGE =V DD
4-5 V EDGE =V DD
4-5 V EDGE =V DD
4-5
4-5
4-5
1-5
2-5
2-5
2-5
3-5 V EDGE =0V
3-5
4-5
3-5
3-5
3-5
1 : FB
2 : EDGE
3 : DRAIN
4 : V DD
5 : SOURCE
SANYO : TO-220FI5H-HA
V DS =20V, f=1MHz
V DS =20V, f=1MHz
TN4Q06
Conditions
min
16.7
15.7
15.2
14.6
0.58
450
150
9.1
8.0
2.3
1.6
30
Ratings
V DD --5.7
typ
1700
0.48
16.5
16.0
15.4
0.70
450
180
200
300
200
0.6
9.9
8.8
1.1
2.6
1.9
0.7
35
max
17.3
16.8
16.2
10.7
0.82
210
0.6
9.6
2.9
2.2
40
1
No.9028-2/4
Unit
kHz
kHz
mA
ns
ns
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
A