GTT2603 E-Tech Electronics LTD, GTT2603 Datasheet
Home Datasheets Tools GTT2603
Manufacturer Part Number
GTT2603
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
E-Tech Electronics LTD
Available stocks
G
P
Description
The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2603 is universally used for all commercial-industrial applications.
Features
*Simple Drive Requirement
*Small Package Outline
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
P
G
-
-
C
C
T
T
H
H
T
T
A
A
N
N
2
2
N
N
6
6
E
E
L
L
Parameter
Parameter
0
0
E
E
3
3
N
N
1,2
H
H
A
A
3
3
N
N
C
C
E
E
M
M
E
E
N
N
3
Max.
T
T
M
M
P
I
I
O
O
D
D
D
D
@T
@T
D
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
E
E
V
V
I
DM
A
A
GS
DS
A
=25 :
=70 :
P
P
=25 :
O
O
W
W
E
E
R
R
M
M
-55 ~ +150
O
O
Ratings
Value
0.016
S
S
62.5
±12
-20
-20
-5
-4
2
F
F
REF.
E
E
A1
A2
E1
A
D
E
c
T
T
0.70
2.70
2.60
1.40
Min.
1.10 MAX.
Millimeter
0.12 REF.
0
Pb Free Plating Product
Max.
0.10
1.00
3.10
3.00
1.80
BV
R
I
D
DS(ON)
ISSUED DATE :2006/03/28
REVISED DATE :
DSS
REF.
L1
e1
L
b
e
W/ :
Unit
Unit
: /W
W
V
V
A
A
A
:
Min.
0.30
0°
0.45 REF.
0.60 REF.
0.95 REF.
1.90 REF.
Millimeter
65m
-5.0A
-20V
Max.
0.50
10°
1/4
Related parts for GTT2603
GTT2603 Summary of contents
... Description The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2603 is universally used for all commercial-industrial applications. Features *Simple Drive Requirement *Small Package Outline Package Dimensions Absolute Maximum Ratings Parameter ...
Electrical Characteristics ( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=55 ) Static Drain-Source On-Resistance 2 ...
Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode ISSUED DATE :2006/03/28 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. ...
Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the ...
Related keywords
GTT2603 datasheet GTT2603 data sheet GTT2603 pdf datasheet GTT2603 component GTT2603 part GTT2603 distributor GTT2603 RoHS GTT2603 datasheet download