GTT2603 E-Tech Electronics LTD, GTT2603 Datasheet - Page 2

• Manufacturer Part Number: GTT2603
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=55 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes: 1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2% .
3. Surface mounted on 1 in
Parameter
Parameter
2
2
2
2
:
:
2
2
copper pad of FR4 board; 156 /W when mounted on
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
rr
rr
/
Tj
Min.
Min.
-0.5
-20
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
10.6
2.32
3.68
32.4
Typ.
-0.1
740
167
126
27.7
5.9
3.6
2.6
22
9
-
-
-
-
-
-
-
-
-
-
:
Max.
±100
1200
Max.
-1.2
120
250
-1.2
-10
53
65
16
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nA
uA
uA
nC
pF
nC
ns
ns
V
V
S
V
V
Reference to 25 , I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=-4.2A
=-4.2A
=-1.2A, V
=-4.2A, V
=3.6
=6
=0, I
=V
=-5V, I
= ±12V
=-20V, V
=-16V, V
=-10V, I
=-4.5V, I
=-2.5V, I
=-1.8V, I
=-16V
=-4.5V
=-15V
=-10V
=0V
=-15V
Test Conditions
Test Conditions
ISSUED DATE :2006/03/28
REVISED DATE :
GS
Min. copper pad.
D
, I
=-250uA
D
D
GS
GS
=-2.8A
D
=-250uA
D
D
D
GS
GS
=-4.5A
=-4.2A
=-2.0A
=-1.0A
=0V
=0V
=0
=0
:
D
=-1mA
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