GTT2623 E-Tech Electronics LTD, GTT2623 Datasheet

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GTT2623

Manufacturer Part Number
GTT2623
Description
P-channel Enhancement Mode Power Mosfet
Manufacturer
E-Tech Electronics LTD
Datasheet
1.GTT2623.pdf (4 pages)
G
P
Description
The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance,
extremely efficient and cost-effectiveness device.
The GTT2623 is universally used for all commercial-industrial applications.
Features
*Low Gate Charge
*Low On-resistance
Package Dimensions
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Thermal Data
Thermal Resistance Junction-ambient
P
G
-
-
C
C
T
T
H
H
T
T
A
A
N
N
2
2
N
N
6
6
E
E
L
L
Parameter
Parameter
2
2
E
E
3
3
N
N
1
H
H
A
A
3
3
N
N
C
C
E
E
M
M
E
E
N
N
3
Max.
T
T
M
M
P
I
I
O
O
D
D
D
D
@T
@T
D
Symbol
Symbol
@T
Tj, Tstg
Rthj-a
E
E
V
V
I
DM
A
A
GS
DS
A
=25 :
=70 :
P
P
=25 :
O
O
W
W
E
E
R
R
M
M
-55 ~ +150
O
O
Ratings
Value
S
S
0.01
±20
-1.6
110
-30
-20
1.2
-2
F
F
REF.
E
E
A1
A2
E1
A
D
E
c
T
T
0.70
2.70
2.60
1.40
Min.
1.10 MAX.
Millimeter
0.12 REF.
0
Pb Free Plating Product
Max.
0.10
1.00
3.10
3.00
1.80
BV
R
I
D
DS(ON)
ISSUED DATE :2006/03/28
REVISED DATE :
DSS
REF.
L1
e1
L
b
e
W/ :
Unit
Unit
W
V
V
A
A
A
:
/W
Min.
0.30
0°
0.45 REF.
0.60 REF.
0.95 REF.
1.90 REF.
Millimeter
170m
-2.0A
-30V
Max.
0.50
10°
1/4

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GTT2623 Summary of contents

Page 1

... Description The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The GTT2623 is universally used for all commercial-industrial applications. Features *Low Gate Charge *Low On-resistance Package Dimensions Absolute Maximum Ratings Parameter ...

Page 2

Electrical Characteristics ( unless otherwise specified) Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25 ) Drain-Source Leakage Current(Tj=70 ) Static Drain-Source On-Resistance 2 ...

Page 3

Characteristics Curve Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 5. Forward Characteristics of Reverse Diode ISSUED DATE :2006/03/28 REVISED DATE : Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. ...

Page 4

Fig 7. Gate Charge Characteristics Fig 9. Maximum Safe Operating Area Fig 11. Switching Time Waveform Important Notice: All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of GTM. GTM reserves the ...

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