GTT2623 E-Tech Electronics LTD, GTT2623 Datasheet - Page 2

• Manufacturer Part Number: GTT2623
• Description: P-channel Enhancement Mode Power Mosfet
• Manufacturer: E-Tech Electronics LTD

Electrical Characteristics (Tj = 25 : : : : unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-Source Leakage Current
Drain-Source Leakage Current(Tj=25 )
Drain-Source Leakage Current(Tj=70 )
Static Drain-Source On-Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1. Pulse width limited by Max. junction temperature.
2. Pulse width 300us, duty cycle 2% .
3. Surface mounted on 1 in
Parameter
Parameter
2
2
2
2
2
copper pad of FR4 board, t 5sec; 180 /W when mounted on
:
:
2
Symbol
R
Symbol
BV
BV
V
T
T
DS(ON)
I
C
I
C
GS(th)
Q
Q
C
V
GSS
DSS
DSS
g
Q
d(on)
d(off)
Q
T
T
T
oss
DSS
iss
rss
SD
fs
gs
gd
g
r
f
rr
rr
/
Tj
Min.
Min.
-1.0
-30
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.02
Typ.
Typ.
150
2.8
0.5
1.4
15
42
32
20
13
2
5
6
3
-
-
-
-
-
-
-
-
Max.
±100
Max.
-3.0
170
280
240
-1.2
-25
4.5
-1
:
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
V/ :
Unit
m
nA
uA
uA
nC
pF
nC
ns
ns
V
V
S
V
V
Reference to 25 , I
V
V
V
V
V
V
V
I
V
V
V
I
V
R
R
V
V
f=1.0MHz
I
I
dI/dt=100A/ s
D
D
S
S
GS
DS
DS
GS
DS
DS
GS
GS
DS
GS
DS
GS
GS
DS
G
D
=-2.0A
=-1.0A
=-1.0A, V
=-2.0A, V
=15
=3.3
=0, I
=V
=-5V, I
= ±20V
=-30V, V
=-24V, V
=-10V, I
=-4.5V, I
=-24V
=-4.5V
=-15V
=-10V
=0V
=-25V
Test Conditions
Test Conditions
ISSUED DATE :2006/03/28
REVISED DATE :
GS
Min.
D
, I
=-250uA
D
D
GS
GS
=-2.0A
D
copper pad.
=-250uA
D
GS
GS
=-2.0A
=-1.6A
=0V
=0V
=0
=0
:
D
=-1mA
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