SI4483EDY Vishay, SI4483EDY Datasheet - Page 3

• Manufacturer Part Number: SI4483EDY
• Description: P-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72862
S-71598-Rev. C, 30-Jul-07
0.020
0.016
0.012
0.008
0.004
0.000
0.1
50
10
50
40
30
20
10
1
0
0.0
0
0
Source-Drain Diode Forward Voltage
0.2
On-Resistance vs. Drain Current
10
1
V
T
V
V
DS
J
SD
GS
Output Characteristics
= 150 °C
– Source-to-Drain Voltage (V)
– Drain-to-Source Voltage (V)
0.4
= 10 thru 4 V
I
D
– Drain Current (A)
20
2
V
V
GS
0.6
GS
= 4.5 V
= 10 V
30
3
0.8
T
3 V
J
40
4
1.0
= 25 °C
1.2
50
5
0.05
0.04
0.03
0.02
0.01
0.00
1.6
1.4
1.2
1.0
0.8
0.6
50
40
30
20
10
0
- 50
0.0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
0.5
V
2
T
GS
J
0
Transfer Characteristics
V
– Junction Temperature (°C)
1.0
GS
– Gate-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
25
4
1.5
25 °C
T
I
C
D
50
Vishay Siliconix
= 125 °C
= 14 A
2.0
Si4483EDY
75
6
2.5
100
www.vishay.com
8
- 55 °C
125
3.0
150
3.5
10
3