SI4913DY Vishay, SI4913DY Datasheet - Page 3

• Manufacturer Part Number: SI4913DY
• Description: Dual P-channel 20-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C unless noted
Document Number: 71997
S-61005-Rev. C, 12-Jun-06
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
40
10
5
4
3
2
1
0
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 9.4 A
0.2
On-Resistance vs. Drain Current
= 10 V
10
6
V
V
GS
SD
Q
T
0.4
g
J
= 1.8 V
= 150 °C
- Source-to-Drain Voltage (V)
I
- Total Gate Charge (nC)
D
- Drain Current (A)
Gate Charge
20
12
0.6
0.8
18
30
V
GS
T
J
1.0
= 25 °C
= 2.5 V
V
GS
40
24
= 4.5 V
1.2
30
50
1.4
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0.000
6000
5000
4000
3000
2000
1000
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
I
D
C
V
I
D
- 25
GS
rss
= 3 A
= 9.4 A
= 4.5 V
1
4
T
V
V
0
J
GS
DS
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source V oltage (V)
25
Capacitance
2
8
50
I
Vishay Siliconix
C
D
C
oss
= 9.4 A
iss
3
12
75
Si4913DY
www.vishay.com
100
4
16
125
150
5
20
3