FS10AS-2 Renesas Electronics Corporation., FS10AS-2 Datasheet - Page 3

• Manufacturer Part Number: FS10AS-2
• Description: High-speed Switching Use Nch Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

FS10AS-2
Performance Curves
Rev.2.00
Nov 21, 2006
5.0
4.0
3.0
2.0
1.0
20
16
12
50
40
30
20
10
Drain Power Dissipation Derating Curve
8
4
0
0
0
0
0
0
Tc = 25°C
Pulse Test
Output Characteristics (Typical)
Gate-Source Voltage V
Drain-Source Voltage V
Gate-Source Voltage (Typical)
Case Temperature Tc (°C)
1.0
4
On-State Voltage vs.
50
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2.0
8
V
100
GS
= 20V
3.0
12
150
Tc = 25°C
Pulse Test
P
GS
DS
4.0
I
D
D
16
= 30W
= 15A
(V)
(V)
10A
10V
7V
5V
5A
6V
200
5.0
20
10
10
10
0.5
0.4
0.3
0.2
0.1
10
–1
5
3
2
7
5
3
2
7
5
3
2
7
5
8
6
4
2
0
0
10
1
0
2
0
–1
Tc = 25°C
Single Pulse
Tc = 25°C
Pulse Test
3 5 7
Output Characteristics (Typical)
Drain-Source Voltage V
Drain-Source Voltage V
Maximum Safe Operating Area
2
3 5 7
0.4
On-State Resistance vs.
Drain Current (Typical)
10
Drain Current I
0
10
2
0
0.8
3 5 7
2
V
V
GS
3 5 7
GS
10
10V
= 10V
1.2
= 20V
1
10
D
2
1
Tc = 25°C
Pulse Test
3 5 7
(A)
DS
DS
20V
2 3
1.6
tw = 10µs
(V)
10
(V)
5 7
7V
5V
100µs
1ms
10ms
DC
6V
2
2.0
10
2
2