SI1305DL Vishay, SI1305DL Datasheet
SI1305DL
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SI1305DL Summary of contents
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... DS DS(on) 0.280 @ V = −4 −8 0.380 @ V = −2 0.530 @ V = −1 Ordering Information: Si1305DL--T1 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) = 150_C Pulsed Drain Current a Continuous Diode Current (Diode Conduction) ...
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... Si1305DL Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge ...
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... J 0.01 0.001 0.0 0.2 0.4 0.6 V − Source-to-Drain Voltage (V) SD Document Number: 71076 S-51075—Rev. D, 13-Jun- 0.8 1.0 1.2 Si1305DL Vishay Siliconix Capacitance 350 300 C iss 250 200 C 150 oss C 100 rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
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... Si1305DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D 0.2 0.1 0.0 −0.1 −0.2 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...
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