SUM110P04-05 Vishay, SUM110P04-05 Datasheet - Page 4

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SUM110P04-05

Manufacturer Part Number
SUM110P04-05
Description
P-channel 40-v D-s Mosfet
Manufacturer
Vishay
Datasheet

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SUM110P04-05
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.1
- 0.3
- 0.5
100
1.1
0.9
0.7
0.5
0.3
0.1
10
- 50 - 25
1
0.0
Source-Drain Diode Forward Voltage
T
J
I
= 150 °C
D
0.3
V
SD
=10 mA
0
- Source-to-Drain Voltage (V)
Threshold Voltage
T
25
J
- Temperature (°C)
0.6
50
75
0.9
T
100
J
1000
= 25 °C
100
10
1
125
1.2
0.1
*V
Limited by r
Safe Operating Area, Junction-to-Case
150
GS
> minimum V
1.5
175
V
DS
- Drain-to-Source Voltage (V)
DS(on)
1
Single Pulse
T
C
*
GS
= 25 °C
at which r
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
0.0001
35
30
25
20
15
10
5
0
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
0.001
10
100
10 ms
1 ms
100 ms
DC
µs
100
2
µs
V
T
GS
0.01
A
3
= 25 °C
- Gate-to-Source Voltage (V)
4
0.1
Time (s)
T
C
S-80274-Rev. B, 11-Feb-08
5
= 25 °C
Document Number: 73493
1.00
T
A
6
= 150 °C
7
10
8
100
9
1000
10

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