VN0606 Supertex, Inc., VN0606 Datasheet
VN0606
Manufacturer Part Number
VN0606
Description
N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
1.VN0606.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VN0606L
Manufacturer:
NXP
Quantity:
12 000
Company:
Part Number:
VN0606M
Manufacturer:
VISHAY
Quantity:
5 000
Features
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Applications
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-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level may
affect device reliability. All voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN0606
Device
ISS
and fast switching speeds
Package Options
VN0606L-G
N-Channel Enhancement-Mode
Vertical DMOS FET
TO-92
-55
O
C to +150
300
Value
BV
BV
±30V
DGS
DSS
O
O
C
C
BV
Pin Confi gurations
Product Marking
DSS
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
(V)
60
/BV
DGS
Y Y W W
0606
VN
YY = Year Sealed
WW = Week Sealed
DRAIN
R
(max)
TO-92 (L)
TO-92 (L)
DS(ON)
3.0
(Ω)
= “Green” Packaging
SOURCE
GATE
VN0606
I
(min)
D(ON)
1.5
(A)
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VN0606 Summary of contents
Page 1
... BV /BV DSS DGS (V) TO-92 60 Pin Confi gurations Value BV DSS BV DGS ±30V - +150 O C Product Marking O 300 C R DS(ON) (max) (Ω) 3.0 SOURCE DRAIN GATE TO-92 ( Year Sealed 0606 WW = Week Sealed “Green” Packaging TO-92 (L) VN0606 I D(ON) (min) (A) 1.5 ...
Page 2
... mmho V = 10V 0V 25V 1.0MHz - 5 25V 600mA 25Ω GEN - 0V PULSE OUTPUT R GEN D.U.T. INPUT VN0606 I † DRM (mA) (A) 330 1 50V = 50V, = 10V DS = 1.0A = 500mA = 470mA ...
Page 3
... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN0606 A102907 Side View ...