VN0808 Supertex, Inc., VN0808 Datasheet
VN0808
Manufacturer Part Number
VN0808
Description
N-channel Enhancement-mode Vertical Dmos Fet N-channel Enhancement-mode Vertical Dmos Fet
Manufacturer
Supertex, Inc.
Datasheet
1.VN0808.pdf
(3 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VN0808L
Manufacturer:
VISHAY
Quantity:
200
Company:
Part Number:
VN0808M
Manufacturer:
VISHAY
Quantity:
3 000
Features
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Applications
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-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VN0808
Device
ISS
and fast switching speeds
Package Option
VN0808L-G
TO-92
N-Channel Enhancement-Mode
Vertical DMOS FET
-55
O
C to +150
300
Value
BV
BV
±30V
DGS
DSS
O
O
C
C
BV
DSS
Pin Confi guration
Product Marking
(V)
80
/BV
General Description
This enhancement-mode (normally-off) transistor utilizes
a vertical DMOS structure and Supertex’s well-proven,
silicon-gate manufacturing process. This combination
produces a device with the power handling capabilities
of bipolar transistors and the high input impedance and
positive temperature coeffi cient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
DGS
Y Y W W
0808
VN
R
YY = Year Sealed
WW = Week Sealed
(max)
DRAIN
4.0
DS(ON)
(Ω)
TO-92 (L)
TO-92 (L)
= “Green” Packaging
SOURCE
GATE
VN0808
I
(min)
D(ON)
1.5
(A)
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VN0808 Summary of contents
Page 1
... BV /BV DSS DGS (V) 80 Pin Confi guration Value BV DSS BV DGS ±30V +150 C Product Marking 300 DS(ON) (max) (Ω) 4.0 SOURCE DRAIN GATE TO-92 ( Year Sealed 0808 WW = Week Sealed “Green” Packaging TO-92 (L) VN0808 I D(ON) (min) (A) 1.5 ...
Page 2
... 10V 10V GS DS 4.0 Ω 10V 1. mmho V = 10V 500mA 0V 25V 1.0MHz 25V 1.0A 25Ω GEN - 0V 350mA PULSE OUTPUT R GEN D.U.T. INPUT VN0808 † I DRM (A) 1 ...
Page 3
... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VN0808 A102907 Side View ...