VN0120 Supertex, Inc., VN0120 Datasheet

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VN0120

Manufacturer Part Number
VN0120
Description
N-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VN0120N2
Manufacturer:
ST/MOTO
Quantity:
20 000
Part Number:
VN0120N5
Manufacturer:
MITSUBISHI
Quantity:
5 000
Ordering Information
Standard Commercial Devices
† MIL visual screening available
High Reliability Devices
See pages 5-4 and 5-5 for MILITARY STANDARD Process
Flows and Ordering Information.
Features
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Applications
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Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifiers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
BV
BV
200V
DSS
DGS
ISS
/
and fast switching speeds
R
(max)
10Ω
DS(ON)
(min)
I
0.4A
D(ON)
N-Channel Enhancement-Mode
Vertical DMOS FETs
-55°C to +150°C
VN0120N2
BV
BV
300°C
± 20V
TO-39
DGS
DSS
7-155
Order Number / Package
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Package Options
Note: See Package Outline section for dimensions.
VN0120N3
TO-92
Case: DRAIN
TO-39
D
G
S
VN0120ND
Die
TO-92
VN0120
S G D
7

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VN0120 Summary of contents

Page 1

... Package Options BV DSS BV DGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 7-155 VN0120 † Die VN0120ND TO-39 TO-92 Case: DRAIN 7 ...

Page 2

... GS D Ω 10V 100mA GS D %/° 10V 100mA 25V 250mA 0V 25V MHz 25V 1A 25Ω GEN PULSE R gen INPUT VN0120 I DRM 1.0A 0.9A OUTPUT D.U.T. ...

Page 3

... Saturation Characteristics 10V (volts) DS Power Dissipation vs. Case Temperature TO-39 TO- 100 125 T (°C) C Thermal Response Characteristics TO- 3. 25°C C TO- 25°C C 0.01 0 (seconds) P VN0120 7 10 150 10 ...

Page 4

... ISS RSS 7-158 On-Resistance vs. Drain Current 10V GS 0 0.2 0.4 0.6 0.8 I (amperes and R Variation with Temperature (th 10V, 500mA 1mA (th 10V, 100mA 100 T (°C) j Gate Drive Dynamic Characteristics V = 10V DS 40V 100 1.0 2.0 3.0 4.0 Q (nanocoulombs) G VN0120 1.0 1.8 1.4 1.0 0.6 0.2 150 5.0 ...

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