LMX2346 National Semiconductor Corporation, LMX2346 Datasheet - Page 6

• Manufacturer Part Number: LMX2346
• Description: Pllatinum? Frequency Synthesizer For Rf Personal Communications
• Manufacturer: National Semiconductor Corporation

www.national.com
LOGICAL INTERFACE (CE, CLOCK, LE, DATA, LD)
V
V
I
I
V
V
MICROWIRE INTERFACE (CLOCK, LE, DATA)
t
t
t
t
t
t
PHASE NOISE
L(f)
L
IH
IL
CS
CH
CWH
CWL
ES
EW
N
IH
IL
OH
OL
Electrical Characteristics
The following conditions apply; V
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for
which the device is intended to be functional. For guaranteed specifications and test conditions see the Electrical Characteristics.
Note 2: This device is a high performance RF integrated circuit with an ESD rating
protected workstations.
Note 3: Phase Noise is measured using a reference evaluation board with a loop bandwidth of approximately 12 kHz. The phase noise specification is the
composite average of 3 measurements made at frequency offsets of 2.0, 2.5 and 3.0 kHz.
Note 4: See Charge Pump Measurement Definitions for detail on how these measurements are made.
Note 5: See Serial Input Data Timing.
Note 6: See F
Note 7: See OSC
Note 8: Normalized Single-Side Band Phase Noise is defined as: L
Note 9: This parameter is derived from Normalized Single Side-Phase Noise, L
Note 10: For F
Symbol
(f)
IN
High-level Input Voltage
Low-level Input Voltage
High-level Input Current
Low-level Input Current
High-level Output Voltage
Low-level Output Voltage
Data to Clock Set Up Time
Data to Clock Hold Time
Clock Pulse Width High
Clock Pulse Width Low
Clock to Latch Enable Set Up
Time
Latch Enable Pulse Width
Single Side-Band Phase Noise
Normalized Single Side-Band
Phase Noise
OSC
Sensitivity Test Setup.
in
frequencies below 10 MHz, it is recommended that the rise time of the signal does not exceed 25ns.
Sensitivity Test Setup.
Parameter
CC
= 3.0V, V
(Continued)
P
= 3.0V; −40˚C ≤ T
V
V
I
I
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
(Note 5)
F
F
F
V
T
F
F
F
V
T
F
F
F
V
T
F
F
F
V
T
F
F
V
T
OH
OL
IH
IL
IN
φ
OSC
OSC
A
IN
φ
OSC
OSC
A
IN
φ
OSC
OSC
A
IN
φ
OSC
OSC
A
φ
OSC
OSC
A
= 200 kHz
= 200 kHz
= 200 kHz
= 200 kHz
= 200 kHz
= 25˚C
= 25˚C (Notes 3, 9)
= 25˚C (Note 3)
= 25˚C (Note 3)
= 25˚C (Note 8)
= 0V, V
= 500 µA
= 900 MHz
= 1750 MHz
= 1960 MHz
= 2450 MHz
= V
= −500 µA
N
(f) = L(f) − 20 log (F
= 10 MHz
= 10 MHz
= 10 MHz
= 10 MHz
= 10 MHz
= 1.0 V
= 1.0 V
= 1.0 V
= 1.0 V
= 1.0 V
CC
= 5.5V
CC
Conditions
(Note 3)
PP
PP
PP
PP
PP
6
n
(f).
= 5.5V
A
<
≤ 85˚C, unless specified differently.
2 kV. Handling and assembly of this device should only be done at ESD
IN
/ F
φ
), where L(f) is defined as the Single Side-Band Phase Noise.
V
0.8 V
CC
−1.0
−1.0
Min
50
10
50
50
50
50
− 0.4
CC
−164.5
Typ
−91
−86
−85
−83
0.2 V
Max
1.0
1.0
0.4
CC
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
Units
µA
µA
ns
ns
ns
ns
ns
ns
V
V
V
V