C2D05120 Cree, Inc., C2D05120 Datasheet - Page 2

• Manufacturer Part Number: C2D05120
• Description: Silicon Carbide Schottky Diode
• Manufacturer: Cree, Inc.

Electrical Characteristics
Note:
1.
Thermal Characteristics
Typical Performance
2
Symbol
Symbol
This is a majority carrier diode, so there is no reverse recovery charge.
R
Q
V
I
10
C
θJC
R
9
8
7
6
5
4
3
2
1
0
F
C
0.0
C2D05120 Rev. C
T
T
T
T
J
J
J
J
Forward Voltage
Reverse Current
Total Capacitive Charge
Total Capacitance
Thermal Resistance from Junction to Case
= 25°C
= 75°C
= 125°C
= 175°C
Figure 1. Forward Characteristics
1.0
V
F
Parameter
Forward Voltage (V)
2.0
Parameter
3.0
4.0
Typ.
100
455
1.6
2.6
50
28
45
33
5.0
Typ.
1.1
Max.
1000
200
1.8
3.0
°C/W
Unit
200
180
160
140
120
100
80
60
40
20
0
Unit
0
µ
nC
pF
V
A
Figure 2. Reverse Characteristics
I
I
V
V
V
di/dt = 500 A/
T
V
V
V
F
F
J
R
R
R
R
R
R
= 5 A T
= 5 A T
= 25°C
= 1200 V T
= 1200 V T
= 1200 V, I
= 0 V, T
= 200 V, T
= 400 V, T
V
500
R
Reverse Voltage (V)
Test Conditions
J
J
=25°C
=175°C
J
= 25°C, f = 1 MHz
T
T
T
T
J
J
J
J
J
J
F
µ
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
J
J
= 25°C
= 75°C
= 125°C
= 175°C
=25°C
=175°C
= 5 A
s
1000
1500
Note