TPCA8020-H TOSHIBA Semiconductor CORPORATION, TPCA8020-H Datasheet - Page 3

• Manufacturer Part Number: TPCA8020-H
• Description: Toshiba Field Effect Transistor Silicon N-channel Mos Type
• Manufacturer: TOSHIBA Semiconductor CORPORATION

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cutoff current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate−source plus gate−drain)
Gate−source charge
Gate−drain (“Miller”) charge
Gate switching charge
Drain reverse
current
Forward voltage (diode)
Characteristic
Characteristic
Rise time
Turn−on time
Fall time
Turn−off time
Pulse (Note 1)
V
V
(Ta = 25°C)
R
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
V
I
Q
I
I
C
|Y
C
Q
C
Q
GSS
DRP
DSS
V
t
Q
t
DSF
off
oss
tr
on
gs1
rss
t
iss
sw
gd
th
fs
f
g
|
V
V
I
I
V
V
V
V
V
V
V
V
I
D
D
DR
GS
DS
DS
GS
GS
DS
DS
DD
DD
DD
Duty < = 1%, t
= 10 mA, V
= 10 mA, V
= 7.5 A, V
V
= 40 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±16 V, V
= 4.5 V, I
= 10 V, I
∼ − 32 V、V
∼ − 32 V、V
∼ − 32 V、V
GS
10 V
0 V
3
(Ta = 25°C)
D
D
D
GS
GS
w
D
GS
GS
GS
Test Condition
Test Condition
= 1 mA
= 3.8 A
GS
GS
GS
DS
= 3.8 A
= 10 μs
= 3.8 A
= 0 V
= −20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V、I
= 5 V、I
= 10 V、I
= 0 V
—
V
I
DD
D
= 3.8 A
∼ − 20 V
D
D
D
= 7.5 A
= 7.5 A
= 7.5 A
V
OUT
Min
Min
1.1
7.5
40
25
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
—
—
Typ.
Typ.
650
240
6.2
2.1
2.7
3.5
⎯
⎯
⎯
⎯
⎯
27
22
15
55
18
11
—
—
TPCA8020-H
3
9
2
2006-11-17
Max
Max
−1.2
±10
2.3
10
35
27
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
μA
μA
nC
pF
ns
V
V
S
A
V