V20100R Vishay, V20100R Datasheet - Page 3

• Manufacturer Part Number: V20100R
• Description: V20100r & Vf20100r - Dual High-voltage Trench Mos Barrier Schottky Rectifier
• Manufacturer: Vishay

Document Number: 89062
Revision: 21-Nov-07
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10000
0.001
1000
0.01
100
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Characteristics Per Diode
10
1
1
Figure 5. Typical Junction Capacitance Per Diode
0.1
10
0
Percent of Rated Peak Reverse Voltage (%)
20
0.2
T
A
Instantaneous Forward Voltage (V)
= 125 °C
30
0.4
T
A
= 150 °C
T
Reverse Voltage (V)
40
1
T
T
T
A
T
0.6
A
A
A
= 25 °C
A
= 150 °C
= 125 °C
= 100 °C
= 25 °C
50
0.8
60
T
A
1.0
= 100 °C
70
10
T
f = 1.0 MHz
V
J
sig
1.2
= 25 °C
80
= 50 mVp-p
1.4
90
100
100
1.6
Figure 6. Typical Transient Thermal Impedance Per Diode
Figure 7. Typical Transient Thermal Impedance Per Diode
0.1
10
10
1
1
0.01
0.01
Vishay General Semiconductor
Junction to Case
V20100R & VF20100R
0.1
0.1
t - Pulse Duration (s)
t - Pulse Duration (s)
1
1
Junction to Case
10
10
VF20100R
V20100R
www.vishay.com
100
100
3