HN2S03FU TOSHIBA Semiconductor CORPORATION, HN2S03FU Datasheet
HN2S03FU
Manufacturer Part Number
HN2S03FU
Description
Toshiba Diode Silicon Epitaxial Schottky Barrier Type
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet
1.HN2S03FU.pdf
(3 pages)
High Speed Switching Application
Maximum Ratings
Electrical Characteristics
* : This is maximum rating of single diode (Q1 or Q2 or Q3).
** :Total rating
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
Forward voltage
Reverse current
Total capacitance
HN2S03FU is composed of 3 independent diodes.
Low forward voltage
Low reverse current
Small total capacitance
In the case of using 2 or 3 diodes, the maximum ratings
per diodes is 75 % of the single diode one.
Characteristic
Characteristic
(Ta = 25°C)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
: V
: I
: C
R
F (3)
T
= 0.5µA (max)
= 3.9pF (typ.)
(Q1, Q2, Q3 Common, Ta = 25°C)
= 0.50V (typ.)
Symbol
Symbol
HN2S03FU
V
V
V
I
V
T
T
I
FSM
V
F (1)
F (2)
F (3)
C
I
I
FM
RM
T
P
stg
opr
O
R
R
T
j
Circuit
Test
―
―
―
―
―
−55∼125
−40∼110
Rating
200 **
100 *
50 *
125
1 *
25
20
1
I
I
I
V
V
F
F
F
R
R
= 1mA
= 5mA
= 50mA
= 20V
= 0, f = 1MH
Test Condition
Unit
mW
mA
mA
°C
°C
°C
V
V
A
z
JEDEC
EIAJ
TOSHIBA
Weight: 6.2mg(Typ.)
Min
―
―
―
―
―
Typ.
0.33
0.38
0.50
3.9
―
1-2T1C
HN2S03FU
―
―
2004-02-25
Max
0.55
0.5
―
―
―
Unit: mm
Unit
µA
pF
V
Related parts for HN2S03FU
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON N−CHANNEL IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
HN2S03FU Summary of contents
Page 1
... TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type High Speed Switching Application HN2S03FU is composed of 3 independent diodes. Low forward voltage : V = 0.50V (typ.) F (3) Low reverse current : I = 0.5µA (max) R Small total capacitance : C = 3.9pF (typ.) T Maximum Ratings (Ta = 25°C) Characteristic Maximum (peak) reverse Voltage ...
Page 2
... Pin Assignment (Top View) Marking A8 2 HN2S03FU 2004-02-25 ...
Page 3
... Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 3 HN2S03FU 030619EAA 2004-02-25 ...