CEF02N6A Chino-Excel Technology Co., Ltd., CEF02N6A Datasheet

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CEF02N6A

Manufacturer Part Number
CEF02N6A
Description
N-channel Enhancement Mode Field Effect Transistor
Manufacturer
Chino-Excel Technology Co., Ltd.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
CEF02N6A
Manufacturer:
SANYO
Quantity:
1 040
Part Number:
CEF02N6AZ
Manufacturer:
CET
Quantity:
4 000
FEATURES
ABSOLUTE MAXIMUM RATINGS
Details are subject to change without notice .
N-Channel Enhancement Mode Field Effect Transistor
CEP02N6A
CEB02N6A
CEF02N6A
Lead free product is acquired.
Super high dense cell design for extremely low R
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Maximum Power Dissipation @ T
Operating and Store Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
High power and current handing capability.
CEB SERIES
TO-263(DD-PAK)
Type
600V
600V
600V
V
DSS
Parameter
Parameter
a
- Derate above 25 C
R
8.5Ω
8.5Ω
8.5Ω
DS(ON)
C
CEP SERIES
TO-220
= 25 C
1.4A
1.4A
1.4A
I
D
CEP02N6A/CEB02N6A
d
@V
DS(ON)
10V
10V
10V
T c = 25 C unless otherwise noted
GS
.
1
Symbol
Symbol
T
I
R
CEF SERIES
TO-220F
R
V
V
J
DM
P
I
,T
DS
GS
θJC
θJA
D
D
stg
e
TO-220/263
G
0.33
62.5
1.4
5.6
41
3
CEF02N6A
-55 to 150
Limit
Limit
±
600
30
TO-220F
http://www.cetsemi.com
0.22
1.4
4.5
5.6
65
27
D
S
Rev 2.
d
d
2007.June
Units
Units
W/ C
C/W
C/W
W
V
V
A
A
C

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CEF02N6A Summary of contents

Page 1

... CEF SERIES CEP SERIES TO-220F TO-220 unless otherwise noted Symbol stg Symbol R θJC R θJA 1 CEF02N6A Limit TO-220/263 TO-220F 600 ± 30 1.4 1.4 d 5.6 5 0.33 0.22 -55 to 150 Limit 3 4.5 62.5 65 Rev 2. http://www.cetsemi.com Units ...

Page 2

... oss f = 1.0 MHz C rss t d(on 300V 10V d(off 480V 10V 0V 0. CEF02N6A Min Typ Max 600 = - 250 µ A 2.5 4.2 = 0.7A 6.5 8.5 = 0.7A 0.9 200 = 0V 14.8 29.6 = 1.4A, 28.4 14.2 D =4.7Ω GEN 25.2 50.4 32.2 16.1 8 5.9 = 1.4A, D 2.1 2.6 1 ...

Page 3

... Temperature CEP02N6A/CEB02N6A 2.4 2.0 1.6 1.2 0.8 0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 -100 125 150 Figure 6. Body Diode Forward Voltage 3 CEF02N6A =125 Gate-to-Source Voltage (V) GS Figure 2. Transfer Characteristics I =0. =10V GS - 100 150 T , Junction Temperature Figure 4. On-Resistance Variation with Temperature 0 ...

Page 4

... Single Pulse - d(on) V OUT V OUT 10% 50 10% PULSE WIDTH Figure 10. Switching Waveforms CEF02N6A 100ms Limit DS(ON) 1ms 10ms DC = =150 Drain-Source Voltage (V) DS Figure 8. Maximum Safe Operating Area t off t t d(off ...

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