CEF02N6A Chino-Excel Technology Co., Ltd., CEF02N6A Datasheet - Page 4

• Manufacturer Part Number: CEF02N6A
• Description: N-channel Enhancement Mode Field Effect Transistor
• Manufacturer: Chino-Excel Technology Co., Ltd.

V
Figure 9. Switching Test Circuit
GS
10
8
6
4
2
0
10
10
10
0
V
I
D
0
-1
-2
10
DS
=1.4A
-2
R
=480V
GEN
1
Qg, Total Gate Charge (nC)
D=0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
Figure 7. Gate Charge
V
2
IN
G
Figure 11. Normalized Thermal Transient Impedance Curve
10
3
S
D
-1
V
DD
R
4
L
Square Wave Pulse Duration (msec)
5
CEP02N6A/CEB02N6A
V
10
OUT
0
6
4
10
V
V
t
1
d(on)
OUT
IN
10%
Figure 10. Switching Waveforms
10
10
10
10
1
0
-1
-2
t
50%
on
10
10%
10
Single Pulse
0
2
R
T
T
PULSE WIDTH
DS(ON)
C
J
V
=150 C
=25 C
90%
t
DS
Figure 8. Maximum Safe
r
INVERTED
CEF02N6A
, Drain-Source Voltage (V)
P
Limit
1. R
2. R
3. T
4. Duty Cycle, D=t1/t2
DM
t
Operating Area
d(off)
10
JM-
θJC
θJC
1
T
t
1
=See Datasheet
C
10
(t)=r (t) * R
50%
= P* R
t
2
3
90%
θJC
t
10%
off
θJC
DC
10
90%
(t)
10ms
2
100ms
1ms
t
f
10
4
10
3
4