UPD166010 Renesas Electronics Corporation., UPD166010 Datasheet

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UPD166010

Manufacturer Part Number
UPD166010
Description
Single N-channel High Side Intelligent Power Device
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPD166010T1F-E1-AY
Manufacturer:
RENESAS
Quantity:
51 482
To our customers,
Corporation, and Renesas Electronics Corporation took over all the business of both
companies. Therefore, although the old company name remains in this document, it is a valid
Renesas Electronics document. We appreciate your understanding.
Issued by: Renesas Electronics Corporation (http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Renesas Electronics website: http://www.renesas.com
Old Company Name in Catalogs and Other Documents
April 1
Renesas Electronics Corporation
st
, 2010

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UPD166010 Summary of contents

Page 1

To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...

Page 2

All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...

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SINGLE N-CHANNEL HIGH SIDE INTELLIGENT POWER DEVICE GENERAL DESCRIPTION μ The PD166010 device is an N-channel high-side switch with charge pump, current controlled input, diagnostic feedback with load current sense and embedded protection functions. FEATURES • Built-in charge pump • ...

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BLOCK DIAGRAM Internal Internal VCC VCC VCC - VIN VCC - VIN power supply power supply Power supply Power supply voltage sense voltage sense Output voltage clamp IIN IIN IN IN ESD ESD 2 2 protection protection VIN VIN PIN ...

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ABSOLUTE MAXIMUM RATING (Ta = 25°C, unless otherwise specified) Parameter Symbol V voltage V CC CC1 V voltage (Load Dump CC2 V voltage (Reverse polarity Load current I L Load current (short circuit I L(SC) ...

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ELECTRICAL CHARACTERISTICS (V Parameter Symbol Required current capability Input switch Input current for turn-off I IL Standby current I CC(off) On state resistance R on Output voltage drop limitation V on(NL) as small load current Turn on ...

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PROTECTION FUNCTIONS ( Parameter Symbol On-state resistance at reverse R on(rev) Note battery condition Note Short circuit detection current I L6, 3(SC) Note I L6, 6(SC) I L12, 3(SC) Note I L12, 6(SC) Note I ...

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DIAGNOSTIC CHARACTERISTICS (V Parameter Symbol Current sense ratio K ILIS Sense current offset current I IS,offset Sense current under fault I IS,fault condition Sense current saturation I IS,lim current Fault sense signal delay after t sdelay(fault) Note short circuit detection ...

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FEATURES DESCLIPTION Driver Circuit (On-Off Control) The high-side output is turned on, if the input pin is shorted to ground. The input current is below I output is turned off, if the input pin is open or the input current ...

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Switching an inductive load OUT Dynamic clamp operation at inductive load switch off The dynamic clamp circuit works only when the inductive load is switched off. When ...

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Short circuit protection Case 1: IN pin is shorted to ground in an overload condition, which includes a short circuit condition. The device shuts down automatically when either or both of following conditions ( detected. The sense current ...

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Case1-(b) Von > V after t on(OvL) d(OC) Short circuit detection OUT OUT BAT 0 t d(oc Depending on the external impedance ...

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Case 2: Short circuit during on-condition The device shuts down automatically when either or both of following conditions (a) is detected. The sense current is fixed at I (a) Von > V after t on(OvL) d(oc) Case2-(a) Von > V ...

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Over-temperature protection The output is switched off if over-temperature is detected. The device switches on again after it cools down Tch V OUT Power dissipation under reverse battery condition In case of reverse ...

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Device behavior at low voltage condition − the supply voltage (V ) goes below increases above V , the device turns on the output automatically. The device stays off if supply voltage (V CIN(CPr) V ...

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Current sense output Z, IS,lim I IS,offset Current sense ratio 22000 20000 18000 16000 14000 12000 10000 8000 6000 4000 are 100 Ω typ and ...

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Measurement condition Switching waveform of OUT Terminal OUT Switching waveform of IS terminal off 90% 50% 50% dV/dton -dV/dtoff 25% 25 son(IS) SIC(IS) SIC(IS) Data Sheet S19689EJ2V0DS ...

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Truth table Input Current L Normal Operation H Over-temperature or Short circuit Open Load <R> Application example in principle 5 V Micro. OUTPUT PORT ADC PORT GND 1) In order to prevent leakage current through at IN terminal via PCB, ...

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TYPICAL CHARACTERISTICS REQUIRED CURRENT CAPABILITY OF INPUT SWITCH VS. AMBIENT TEMPERATURE 2.5 2 1.5 1 0 100 Ambient Temperature Ta [degreeC] STANDBY CURRENT VS. AMBIENT TEMPERATURE - 100 ...

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TURN ON TIME VS. AMBIENT TEMPERATURE 500 400 Vcc-VIN=6V 300 Vcc-VIN=12V 200 Vcc-VIN=18V 100 0 - 100 Ambient Temperature Ta [degreeC] SLEW RATE ON VS. AMBIENT TEMPERATURE 0.6 0.5 0.4 0.3 0.2 0 100 ...

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SENSE CURRENT OFFSET CURRENT VS. AMBIENT TEMPERATURE 1 0.8 0.6 0.4 0 100 150 Ambient Temperature Ta [degreeC] SENSE CURRENT SATURATION CURRENT VS. AMBIENT TEMPERATURE - 100 ...

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INDUCTIVE LOAD SWITCH-OFF ENERGY DISSIPATION FOR A SINGLE PULSE Maximum allowable load inductance for a single switch off 100 10 1 0.01 The energy dissipation for an inductive load switch-off single pulse in device (EAS1) is estimated by the following ...

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THERMAL CHARACTERISTICS TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 Device × × 1.5 mmt epoxy PCB 2 FR-4 with 100 10 1 0.1 0.001 0.01 μ m copper area Rth(ch-a)=55.0degreeC/W Rth(ch-c)=3.17degreeC/W ...

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TAPING INFORMATION This is one type (E1) of direction of the device in the career tape. MARKING INFORMATION This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren't indicated. Note Lot ...

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REVISION HISTORY Revision 1st edition Released 1st edition March 2009 2nd edition Released 2nd edition January 2010 Revised application example in principle Revised typical characteristics curve errata Major changes since last version Data Sheet S19689EJ2V0DS μ PD166010 Page 16 19 ...

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VOLTAGE APPLICATION WAVEFORM AT INPUT PIN: Waveform distortion due to input noise or a reflected wave may cause malfunction. If the input of the CMOS device stays in the area between VIL (MAX) and VIH (MIN) due to noise, ...

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The information in this document is current as of January, 2010. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most ...

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