FGA70N30TD ETC-unknow, FGA70N30TD Datasheet - Page 6

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FGA70N30TD

Manufacturer Part Number
FGA70N30TD
Description
300v, 70a Pdp Igbt
Manufacturer
ETC-unknow
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGA70N30TDTU
Manufacturer:
Fairchild Semiconductor
Quantity:
135
FGA70N30TD Rev. A
Typical Performance Characteristics
Figure 15. Switching Loss vs. Gate Resistance
Figure 13. Turn-on Characteristics vs.
2000
1000
100
500
100
10
10
0
0
E
E
Common Emitter
V
T
T
off
on
C
C
GE
Collector Current
= 25
= 125
= 15V, R
o
20
20
C
o
C
Collector Current, I
Gate Resistance, R
G
= 15
1E-3
0.01
0.1
40
1
40
1E-5
0.05
0.02
0.01
0.2
0.1
0.5
Common Emitter
V
I
T
T
C
C
C
CC
60
60
single pulse
= 40A
= 25
= 125
= 200V, V
C
G
Figure 17. Transient Thermal Impedance of IGBT
[A]
o
[ Ω ]
1E-4
C
o
C
80
80
GE
= 15V
t
d(on)
t
r
100
100
1E-3
Rectangular Pulse Duration [sec]
(Continued)
6
0.01
Figure 16. Switching Loss vs. Collector Current
Figure 14. Turn-off Characteristics vs.
10000
1000
1000
100
100
10
0
0
t
0.1
d(off)
E
Common Emitter
V
T
T
Common Emitter
V
T
T
E
on
GE
C
C
GE
C
C
off
t
t
= 25
= 125
= 25
= 125
f
f
Collector Current
= 15V, R
= 15V, R
o
o
20
C
C
20
o
o
C
C
P
DM
Collector Current, I
G
Collector Current, I
G
= 15
= 15
1
t
40
40
1
t
2
60
60
10
C
C
[A]
[A]
80
80
www.fairchildsemi.com
100
100

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