TF218TH Sanyo Semiconductor Corporation, TF218TH Datasheet - Page 2

• Manufacturer Part Number: TF218TH
• Description: N-channel Silicon Junction Fet
• Manufacturer: Sanyo Semiconductor Corporation

* : The TF218TH is classified by I DSS as follows : (unit : A)
Package Dimensions
unit : mm
7031-001
500
450
400
350
300
250
200
150
100
500
400
300
200
100
450
350
250
150
50
50
--0.7
0
0
0
Rank
I DSS
1
--0.6
Bottom View
Top View
1
Drain-to-Source Voltage, V DS -- V
1.4
2
Gate-to-Source Voltage, V GS -- V
3
0.45
--0.5
140 to 240
2
3
0.25
0.2
A4
I D -- V DS
I D -- V GS
1 : Drain
2 : Source
3 : Gate
SANYO : VTFP
4
--0.4
0.1
5
--0.3
210 to 350
6
A5
--0.2
7
8
--0.1
V DS =5V
--0.5V
IT02310
IT02312
9
10
0
TF218TH
Test Circuit
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
500
400
300
200
100
400
320
240
160
450
350
250
150
360
280
200
120
80
50
40
--1.0
0
0
0
15pF
OSC
--0.9
--0.8
Drain-to-Source Voltage, V DS -- V
1
Gate-to-Source Voltage, V GS -- V
--0.7
--0.6
I D -- V DS
I D -- V GS
2
VTVM
33 F
+
--0.5
1k
--0.4
V
3
THD
Output Impedance
--0.3
B
--0.2
V CC =4.5V
V CC =1.5V
4
A
V DS =5V
No.7683-2/4
--0.1
--0.5V
IT03015
IT02313
--0
5