QS5U27 ROHM Co. Ltd., QS5U27 Datasheet
QS5U27
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QS5U27 Summary of contents
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... QS5U27 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS5U27 combines Pch MOS FET with a Schottky barrier diode in a TSMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. Applications ...
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... Min. Typ. Max. Unit − − −1 =−0.75A Min. Typ. Max. Unit − − 0. =1.0A F − − µA 200 V =20V R QS5U27 ° °C °C Conditions =0V DS =0V GS =0V GS =−1mA D =−4.5V GS =−4V GS =−2.5V GS =−0.75A ...
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... C iss 100 C oss C rss 10 0.01 0 100 DRAIN-SOURCE VOLTAGE : −V (V) DS Fig.8 Typical Capacitance vs. Drain-Source Voltage QS5U27 1000 =− Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta=−25° DRAIN CURRENT : −I (A) D Fig.3 Static Drain-Source On-State Resistance vs. Drain Current (ΙΙ) 1000 Ta=25° ...
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... Fig.13 Gate Charge Measurement Circuit D.U. d(on) Fig.12 Switching Waveforms D.U. Fig.14 Gate Charge Waveforms QS5U27 Pulse Width 10% 50% 50% 90% 10% 10% 90% 90 d(off off Charge Rev.A 4/4 ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...