SP8K63 ROHM Co. Ltd., SP8K63 Datasheet - Page 2

• Manufacturer Part Number: SP8K63
• Description: 4v Drive Nch+nch Mosfet
• Manufacturer: ROHM Co. Ltd.

Transistors
<It is the same characteristics for the Tr1 and Tr2.>
<It is the same characteristics for the Tr1 and Tr2.>
∗Pulsed
∗Pulsed
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source
Gate-drain
Forward voltage
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
Parameter
Parameter
charge
charge
V
Symbol
Symbol
R
V
(BR) DSS
t
t
I
C
I
DS (on)
C
C
Q
V
GS (th)
d (on)
d (off)
Q
GSS
Y
Q
DSS
t
t
oss
SD
iss
rss
r
f
gs
gd
fs
g
∗
∗
∗
∗
∗
∗
∗
∗
∗
∗
Min.
Min.
1.0
4.5
30
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
1000
Typ.
Typ.
150
100
8.5
2.8
2.8
20
25
27
15
40
40
15
−
−
−
−
−
−
Max.
Max.
12.8
±10
2.5
1.2
28
35
38
−
1
−
−
−
−
−
−
−
−
−
−
Unit
Unit
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
I
I
V
V
f=1MHz
I
V
R
R
I
V
R
I
D
D
D
D
D
D
D
S
GS
DS
DS
DS
GS
GS
GS
=1mA, V
=7A, V
=7A, V
=7A, V
=7A, V
=3.5A, V
L
G
=7A,
L
=7A, V
=4.29Ω
=2.14Ω, R
=10Ω
=±20V, V
=30V, V
=10V, I
=10V
=0V
=10V
=5V
V
DD
GS
GS
GS
GS
DS
Conditions
GS
DD
Conditions
=10V
=0V
D
=10V
=4.5V
=4.0V
GS
=1mA
=0V
15V
G
DS
=0V
=10Ω
15V
=0V
SP8K63
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