NTHD4102P ON Semiconductor, NTHD4102P Datasheet

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NTHD4102P

Manufacturer Part Number
NTHD4102P
Description
Power Mosfet -20 V, -4.1 A, Dual P-channel Chipfet
Manufacturer
ON Semiconductor
Datasheet

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NTHD4102P
Power MOSFET
−20 V, −4.1 A, Dual P−Channel ChipFETt
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 5
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain
Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering
Purposes (1/8” from case for 10 s)
Junction−to−Ambient, Steady State (Note 1)
Junction−to−Ambient, t ≤ 10s (Note 1)
Environments such as Portable Electronics
Voltages are not Required
Migration to Lower Levels using the same Basic Topology
Portable Equipment such as MP3 Players, Cell Phones, and PDAs
Offers an Ultra Low R
Miniature ChipFET Package 40% Smaller Footprint than TSOP−6
Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin
Simplifies Circuit Design since Additional Boost Circuits for Gate
Operated at Standard Logic Level Gate Drive, Facilitating Future
Pb−Free Package is Available
Optimized for Battery and Load Management Applications in
Charge Control in Battery Chargers
Buck and Boost Converters
[1 oz] including traces)
Parameter
Parameter
Steady State
Steady State
(T
t ≤ 10 s
t ≤ 10 s
J
DS(ON)
= 25°C unless otherwise noted)
tp = 10 ms
Solution in the ChipFET Package
T
T
T
T
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
Symbol
V
T
R
V
I
P
T
STG
T
DSS
I
DM
I
qJA
GS
D
S
J
D
L
,
−55 to
Value
−13.8
"8.0
−2.9
−2.1
−4.1
−1.1
Max
−20
150
260
113
1.1
2.1
60
1
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
G
†For information on tape and reel specifications,
NTHD4102PT1
NTHD4102PT1G
1
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
D
D
D
D
V
P−Channel MOSFET
−20 V
1
1
2
2
CONNECTIONS
(BR)DSS
Device
8
7
6
5
ORDERING INFORMATION
PIN
S
C7 = Specific Device Code
M
G
1
http://onsemi.com
= Month Code
= Pb−Free Package
D
1
2
3
4
64 mW @ −4.5 V
120 mW @ −1.8 V
85 mW @ −2.5 V
1
(Pb−Free)
Package
ChipFET
ChipFET
R
S
G
S
G
DS(ON)
1
2
1
2
Publication Order Number:
G
2
1
2
3
4
TYP
P−Channel MOSFET
CASE 1206A
MARKING
DIAGRAM
ChipFET
STYLE 2
3000/Tape & Reel
3000/Tape & Reel
NTHD4102P/D
Shipping
S
2
I
D
−4.1 A
MAX
D
2
8
7
6
5

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NTHD4102P Summary of contents

Page 1

... PIN MARKING DIAGRAM Specific Device Code M = Month Code G = Pb−Free Package ORDERING INFORMATION † Package Shipping ChipFET 3000/Tape & Reel ChipFET 3000/Tape & Reel (Pb−Free) Publication Order Number: NTHD4102P/D ...

Page 2

... DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge 2. Pulse test: pulse width ≤ 300 ms, duty cycle ≤ Switching characteristics are independent of operating junction temperatures NTHD4102P = 25°C unless otherwise noted) J Symbol Test Condition ...

Page 3

... DRAIN CURRENT (AMPS) D, Figure 3. On−Resistance vs. Drain Current and Gate Voltage 10000 V GS 1000 100 10 1 0.1 2 NTHD4102P (T = 25°C unless otherwise noted 25° −2 −1.8 V −1 −1 0.5 −V GS Figure 2 ...

Page 4

... R , GATE RESISTANCE (OHMS) G Figure 8. Resistive Switching Time Variation vs. Gate Resistance 100 10 1 0.1 0.01 0.1 NTHD4102P (T = 25°C unless otherwise noted 25° iss oss Figure 7. Gate−to−Source and Drain−to−Source ...

Page 5

... SCALE 20:1 0.026 Basic *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTHD4102P PACKAGE DIMENSIONS ChipFET] CASE 1206A−03 ISSUE G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. ...

Page 6

... USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTHD4102P/D ...

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