NTHD4102P ON Semiconductor, NTHD4102P Datasheet - Page 3

• Manufacturer Part Number: NTHD4102P
• Description: Power Mosfet -20 V, -4.1 A, Dual P-channel Chipfet
• Manufacturer: ON Semiconductor

0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
10
0.2
0.1
9
2
1
0
8
7
6
5
4
3
0
0
Figure 3. On−Resistance vs. Drain Current and
2
−V
1
DS
Figure 1. On−Region Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
V
GS
2
−I
= −10 V to −2.8 V
3
D,
DRAIN CURRENT (AMPS)
Gate Voltage
TYPICAL PERFORMANCE CURVES
3
10000
4
1000
4
100
0.1
10
1
2
5
V
GS
Figure 5. Drain−to−Source Leakage Current
−V
= 0 V
DS,
6
3
5
V
V
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
T
GS
GS
J
= 25°C
= −2.5 V
= −4.5 V
−2.4 V
−1.8 V
−1.6 V
7
−1.4 V
http://onsemi.com
4
NTHD4102P
8
6
vs. Voltage
T
T
T
J
J
3
J
= 100°C
5
= 125°C
= 25°C
1.5
1.3
1.1
0.9
0.7
0.5
(T
9
8
7
6
5
4
3
2
1
0
−50
J
0
= 25°C unless otherwise noted)
6
V
GS
Figure 4. On−Resistance Variation with
−V
−25
0.5
= −4.5 V
GS
T
Figure 2. Transfer Characteristics
J
7
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, JUNCTION TEMPERATURE (°C)
25°C
0
1
8
125°C
Temperature
1.5
25
T
50
J
2
= −55°C
2.5
75
100
3
125
3.5
150
4