ECH8401 Sanyo Semiconductor Corporation, ECH8401 Datasheet - Page 2

• Manufacturer Part Number: ECH8401
• Description: N-channel Silicon Mosfet
• Manufacturer: Sanyo Semiconductor Corporation

Continued from preceding page.
Switching Time Test Circuit
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
10
9
8
7
6
5
4
3
2
1
0
0
P.G
4V
0V
0.1
PW=10 s
D.C. 1%
Parameter
V IN
0.2
Drain-to-Source Voltage, V DS -- V
0.3
V IN
G
50
I D -- V DS
0.4
0.5
V DD =10V
D
0.6
S
I D =5A
R DS (on)1
R DS (on)2
R DS (on)3
R L =2
Symbol
t d (on)
t d (off)
ECH8401
Coss
0.7
Ciss
Crss
V SD
Qgs
Qgd
yfs
Qg
t r
t f
V GS =1.5V
V OUT
0.8
V DS =10V, I D =5A
I D =5A, V GS =4V
I D =5A, V GS =3.1V
I D =2A, V GS =2.5V
V DS =10V, f=1MHz
V DS =10V, f=1MHz
V DS =10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
V DS =10V, V GS =10V, I D =5A
V DS =10V, V GS =10V, I D =5A
V DS =10V, V GS =10V, I D =5A
I S =10A, V GS =0
0.9
IT04242
1.0
ECH8401
Conditions
Electrical Connection
10
9
8
7
6
5
4
3
2
1
0
0
V DS =10V
D
S
Gate-to-Source Voltage, V GS -- V
D
S
0.5
min
D
S
I D -- V GS
14
1.0
Ratings
G
D
typ
1700
0.82
330
270
150
220
160
2.6
7.4
20
10
12
29
52
9
max
1.5
15.5
1.2
14
19
No.7609-2/4
IT04243
Unit
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
V
2.0