HAT1036R Renesas Electronics Corporation., HAT1036R Datasheet - Page 4

• Manufacturer Part Number: HAT1036R
• Description: Silicon P Channel Power Mos Fet Power Switching
• Manufacturer: Renesas Electronics Corporation.

HAT1036R
Rev.7.00 Sep 07, 2005 page 4 of 6
–10
–20
–30
–40
–50
100
Static Drain to Source on State Resistance
50
40
30
20
10
50
20
10
–0.1 –0.2 –0.5 –1
0
0
–40
0
Reverse Drain Current
I
Pulse Test
V
D
Case Temperature
Dynamic Input Characteristics
V
DS
= –12 A
Body-Drain Diode Reverse
GS
Gate Charge
40
0
–10 V
= –4 V
vs. Temperature
Recovery Time
V
DD
I
40
80
D
V
= –2 A, –5 A, –10 A
= –5 V
GS
–10 V
–25 V
di / dt = 20 A / µs
V
–2 A, –5 A, –10 A
GS
–2
V
120
80
DD
= 0, Ta = 25°C
Qg (nc)
= –25 V
Tc (°C)
–5
–10 V
I
–5 V
120
160
DR
–10
(A)
200
–20
160
–12
–16
–20
–4
–8
0
10000
3000
1000
1000
300
100
100
500
200
100
0.3
0.1
30
10
30
10
50
20
10
–0.1 –0.3
–0.1
3
1
0
Drain to Source Voltage V
Forward Transfer Admittance vs.
V
Rg = 50 Ω, duty ≤ 1 %
t d(on)
GS
–0.2
Switching Characteristics
–10
= –4 V, V
Drain to Source Voltage
Typical Capacitance vs.
Drain Current
Drain Current I
–0.5 –1
25°C
Tc = –25°C
–1
Drain Current
–20
DS
Coss
Crss
–3
Ciss
= –10 V
75°C
–2
–30
–10
I
D
V
Pulse Test
D
V
f = 1 MHz
DS
–5
GS
(A)
(A)
t d(off)
–40
= –10 V
–30
t r
DS
= 0
–10
(V)
–100
t f
–50
–20