UPA1725 Renesas Electronics Corporation., UPA1725 Datasheet

UPA1725

Manufacturer Part Number

UPA1725

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1725.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

designed for power management applications of

notebook computers and so on.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

This PA1725 is N-Channel MOS Field Effect Transistor

2.5-V gate drive and low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

PA1725G

G14049EJ2V0DS00 (2nd edition)

April 2001 NS CP(K)

= 21.0 m

= 22.0 m

= 30.0 m

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

10 s, Duty Cycle

= 950 pF TYP.

MAX. (V

Note1

= 25°C)

= 0 V)

= 4.5 V, I

= 4.0 V, I

= 2.5 V, I

Power SOP8

N-CHANNEL POWER MOS FET

PACKAGE

Note2

1 %

The mark ! ! ! ! shows major revised points.

= 25°C, All terminals are connected.)

= 3.5 A)

INDUSTRIAL USE

D(pulse)

D(DC)

DSS

GSS

DATA SHEET

stg

SWITCHING

–55 to + 150

x 2.2mm

MOS FIELD EFFECT TRANSISTOR

±12

±28

150

2.0

±7

°C

5.37 MAX.

PACKAGE DRAWING (Unit : mm)

0.40

1.27

+0.10

–0.05

0.78 MAX.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

2,3

5,6,7,8

0.5 ±0.2

Source

Drain

6.0 ±0.3

4.4

; Non connection

; Source

; Gate

; Drain

PA1725

Body

Diode

1999, 2000

0.8

0.10

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UPA1725 Summary of contents

Page 1

DESCRIPTION This PA1725 is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on. FEATURES 2.5-V gate drive and low on-resistance R = 21.0 m MAX 4 DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T FORWARD TRANSFER CHARACTERISTICS 100 125˚C A 75˚C 25˚C 25˚C 0.1 0.01 0.001 Gate to Source Voltage - V GS DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 ...

Page 4

FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 25˚C A 25˚C 75˚C 125˚C 1 0.1 0.001 0.01 0 Drain Current - A D CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 000 1 000 100 10 ...

Page 5

DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚ FORWARD BIAS SAFE OPERATING AREA 100 T ...

Page 6

Data Sheet G14049EJ2V0DS PA1725 ...

Page 7

Data Sheet G14049EJ2V0DS PA1725 7 ...

Page 8

The information in this document is current as of April, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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