UPA1731 Renesas Electronics Corporation., UPA1731 Datasheet

UPA1731

Manufacturer Part Number

UPA1731

Description

Switching P-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1731.pdf (8 pages)

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Current page: 1 of 8
Download datasheet (67Kb)

Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

DESCRIPTION

designed for power management applications of

notebook computers and Li-ion battery protection circuit.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Notes 1. PW

The PA1731 is P-Channel MOS Field Effect Transistor

Low on-resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

iss

G14285EJ2V1DS00 (2nd edition)

May 2001 NS CP(K)

PA1731G

= 10.3 m

= 14.6 m

= 16.5 m

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

: C

iss

=2600 pF TYP.

10 s, Duty Cycle

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

TYP. (V

Note1

= 25°C)

= 0 V)

= –10 V, I

= –4.5 V, I

= –4.0 V, I

P-CHANNEL POWER MOS FET

Power SOP8

PACKAGE

Note2

1 %

The mark

= 25°C, All terminals are connected.)

= –5.0 A)

INDUSTRIAL USE

D(pulse)

D(DC)

GSS

DATA SHEET

DSS

stg

SWITCHING

–55 to + 150

shows major revised points.

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

m 20

m 10

m 40

–30

150

2.0

°C

PACKAGE DRAWING (Unit : mm)

5.37 Max.

0.40

1.27

+0.10

–0.05

0.78 Max.

0.12 M

EQUIVALENT CIRCUIT

Gate

Protection

Diode

1,2,3

5,6,7,8

0.5 ±0.2

6.0 ±0.3

; Source

; Gate

; Drain

PA1731

4.4

Source

Drain

Body

Diode

0.8

0.10

1999

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UPA1731 Summary of contents

Page 1

P-CHANNEL POWER MOS FET DESCRIPTION The PA1731 is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES Low on-resistance R = 10.3 m TYP – DS(on)1 ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Drain to Source On-state Resistance Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 50˚C A 25˚C 1 25˚C 75˚C 125˚C 0.1 150˚C 0.01 0.001 0.0001 0 1.0 2 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 T ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 25 Pulsed 100 150 Channel Temperature - ˚C ...

Page 6

Data Sheet G14285EJ2V1DS PA1731 ...

Page 7

Data Sheet G14285EJ2V1DS PA1731 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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