UPA1728 Renesas Electronics Corporation., UPA1728 Datasheet

UPA1728

Manufacturer Part Number

UPA1728

Description

Switching N-channel Power Mos Fet Industrial Use

Manufacturer

Renesas Electronics Corporation.

Datasheet

1.UPA1728.pdf (8 pages)

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Document No.

Date Published

Printed in Japan

ORDERING INFORMATION

ABSOLUTE MAXIMUM RATINGS (T

Remark

DESCRIPTION

designed for high current switching applications.

FEATURES

Drain to Source Voltage (V

Gate to Source Voltage (V

Drain Current (DC)

Drain Current (Pulse)

Total Power Dissipation (T

Channel Temperature

Storage Temperature

Single Avalanche Current

Single Avalanche Energy

Notes 1. PW

The PA1728 is N-Channel MOS Field Effect Transistor

Single chip type

Low on-state resistance

Low C

Built-in G-S protection diode

Small and surface mount package (Power SOP8)

DS(on)1

DS(on)2

DS(on)3

PART NUMBER

2. Mounted on ceramic substrate of 1200 mm

3. Starting T

iss

G14321EJ3V0DS00 (3rd edition)

March 2002 NS CP(K)

PA1728G

= 19 m

= 23 m

= 24 m

The diode connected between the gate and source of the transistor serves as a protector against ESD.

When this device actually used, an additional protection circuit is externally required if a voltage

exceeding the rated voltage may be applied to this device.

: C

iss

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

= 1700 pF TYP.

10 s, Duty cycle

TYP. (V

Note1

= 25°C, V

Note3

= 25°C)

= 0 V)

= 10 V, I

= 4.5 V, I

= 4.0 V, I

Power SOP8

PACKAGE

N-CHANNEL POWER MOS FET

= 30 V, R

Note2

= 4.5 A)

The mark

= 25°C, All terminals are connected.)

D(pulse)

D(DC)

= 25

DATA SHEET

DSS

GSS

stg

SWITCHING

, T

–55 to + 150

shows major revised points.

x 2.2 mm

MOS FIELD EFFECT TRANSISTOR

±20

±36

150

= 20

2.0

±9

0 V

°C

PACKAGE DRAWING (Unit: mm)

5.37 Max.

0.40

1.27

+0.10

–0.05

0.78 Max.

EQUIVALENT CIRCUIT

Gate

Protection

Diode

0.12 M

1, 2, 3

5, 6, 7, 8

0.5 ±0.2

6.0 ±0.3

PA1728

4.4

Source

; Source

; Gate

; Drain

Drain

Body

Diode

1999,2000,2001

0.8

0.10

Related parts for UPA1728

UPA1728 Summary of contents

Page 1

N-CHANNEL POWER MOS FET DESCRIPTION The PA1728 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Single chip type Low on-state resistance TYP DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T A DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 25˚C A 25˚C 75˚C 0.1 150˚ 0. Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 V = ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 50 Pulsed 4 4 100 Channel Temperature - ˚C ch ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 0.1 10 100 Inductive Load - H ...

Page 7

Data Sheet G14321EJ3V0DS PA1728 7 ...

Page 8

The information in this document is current as of March, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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