UPA1764 Renesas Electronics Corporation., UPA1764 Datasheet

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UPA1764

Manufacturer Part Number
UPA1764
Description
Switching Dual N-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet
1.UPA1764.pdf (8 pages)

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Document No.
Date Published
Printed in Japan
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS (T
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
DESCRIPTION
designed for high current switching applications.
FEATURES
Drain to Source Voltage (V
Gate to Source Voltage (V
Drain Current (DC) (T
Drain Current (pulse)
Total Power Dissipation (1 unit)
Total Power Dissipation (2 unit)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Notes 1. PW
The
Dual chip type
Low on-state resistance
R
R
R
Low input capacitance
C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
DS(on)1
DS(on)2
DS(on)3
iss
= 1300 pF TYP.
PART NUMBER
2. T
3. Starting T
PA1764 is N-Channel MOS Field Effect Transistor
G14329EJ2V0DS00 (2nd edition)
May 2001 NS CP(K)
= 27 m
= 32 m
= 34 m
PA1764G
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
A
= 25°C, Mounted on ceramic substrate of 1200 mm
10 s, Duty cycle
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
TYP. (V
TYP. (V
TYP. (V
ch
Note1
C
= 25°C, V
= 25°C)
Note3
Note3
DS
GS
GS
GS
GS
DUAL N-CHANNEL POWER MOS FET
= 0 V)
= 0 V)
= 10 V, I
= 4.5 V, I
= 4.0 V, I
Note2
Note2
DD
= 30 V, R
Power SOP8
1%
PACKAGE
D
D
D
= 3.5 A)
= 3.5 A)
= 3.5 A)
A
= 25°C, All terminals are connected.)
INDUSTRIAL USE
I
G
D(pulse)
I
V
V
D(DC)
T
E
T
I
P
P
DSS
GSS
= 25
AS
DATA SHEET
stg
AS
ch
The mark
T
T
SWITCHING
–55 to + 150
, V
GS
MOS FIELD EFFECT TRANSISTOR
±20
±28
150
shows major revised points.
1.7
2.0
60
±7
98
= 20
7
2
x 2.2 mm
0 V
mJ
°C
°C
W
W
V
V
A
A
A
PACKAGE DRAWING (Unit : mm)
8
1
5.37 MAX.
0.40
1.27
+0.10
–0.05
0.78 MAX.
5
4
EQUIVALENT CIRCUIT
Gate
Gate
Protection
Diode
0.12 M
(1/2 Circuit)
1
2
7, 8 : Drain 1
3
4
5, 6 : Drain 2
0.5 ±0.2
Source
©
: Source 1
: Gate 1
: Source 2
: Gate 2
Drain
6.0 ±0.3
PA1764
4.4
Body
Diode
0.8
0.10
1999, 2001

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UPA1764 Summary of contents

Page 1

DUAL N-CHANNEL POWER MOS FET DESCRIPTION The PA1764 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES Dual chip type Low on-state resistance TYP DS(on ...

Page 2

ELECTRICAL CHARACTERISTICS (T CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time ...

Page 3

TYPICAL CHARACTERISTICS (T DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 10 I ...

Page 4

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚ 75˚ 25˚ 25˚C A 0.1 0. Gate to Source Voltage ...

Page 5

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 100 T ...

Page 6

SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD 100 0.1 10 100 Inductive Load - H 6 120 100 ...

Page 7

Data Sheet G14329EJ2V0DS PA1764 7 ...

Page 8

The information in this document is current as of May, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications ...

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