UPA1792 Renesas Electronics Corporation., UPA1792 Datasheet

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UPA1792

Manufacturer Part Number
UPA1792
Description
Switching N- And P-channel Power Mos Fet Industrial Use
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Document No. G14557EJ3V0DS00 (3rd edition)
Date Published April 2003 NS CP(K)
Printed in Japan
DESCRIPTION
Transistors designed for Motor Drive application of HDD and so
on.
ORDERING INFORMATION
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
FEATURES
Low input capacitance
N-channel C
P-channel C
Built-in G-S protection diode
Small and surface mount package (Power SOP8)
The PA1792 is N- and P-channel MOS Field Effect
Low on-state resistance
N-channel R
P-channel R
PART NUMBER
PA1792G
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
R
R
R
R
DS(on)1
DS(on)2
DS(on)3
DS(on)1
DS(on)2
DS(on)3
iss
iss
= 760 pF TYP.
= 900 pF TYP.
= 36 m MAX. (V
= 54 m MAX. (V
= 65 m MAX. (V
= 26 m
= 36 m
= 42 m
N- AND P-CHANNEL POWER MOS FET
MAX. (V
MAX. (V
MAX. (V
Power SOP8
PACKAGE
GS
GS
GS
The mark
GS
GS
GS
= 10 V, I
= 4.5 V, I
= 4.0 V, I
= 10 V, I
= 4.5 V, I
= 4.0 V, I
DATA SHEET
SWITCHING
D
shows major revised points.
D
D
D
D
D
= 3.4 A)
= 2.9 A)
= 3.4 A)
= 3.4 A)
= 2.9 A)
= 2.9 A)
MOS FIELD EFFECT TRANSISTOR
Gate
Gate
Protection
Diode
N-channel
8
1
Source
Drain
PACKAGE DRAWING (Unit: mm)
5.37 Max.
EQUIVALENT CIRCUIT
0.40
1.27
Body
Diode
+0.10
–0.05
0.78 Max.
5
4
0.12 M
N-channel
P-channel
Gate
Gate
Protection
Diode
PA1792
0.5 ±0.2
6.0 ±0.3
P-channel
1
2
7, 8
3
4
5, 6
4.4
: Source 1
: Gate 1
: Drain 1
: Source 2
: Gate 2
: Drain 2
Source
Drain
1999, 2000
Body
Diode
0.8
0.10

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UPA1792 Summary of contents

Page 1

N- AND P-CHANNEL POWER MOS FET DESCRIPTION The PA1792 is N- and P-channel MOS Field Effect Transistors designed for Motor Drive application of HDD and so on. FEATURES Low on-state resistance N-channel MAX. (V DS(on)1 R ...

Page 2

ABSOLUTE MAXIMUM RATINGS (T PARAMETER Drain to Source Voltage ( Gate to Source Voltage ( Drain Current (DC) Note1 Drain Current (pulse) Note2 Total Power Dissipation (1 unit) Note2 Total Power Dissipation ...

Page 3

ELECTRICAL CHARACTERISTICS (T N-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off ...

Page 4

P-channel CHARACTERISTICS SYMBOL Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall ...

Page 5

TYPICAL CHARACTERISTICS (T A (1) N-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING ...

Page 6

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 125˚C A 75˚C 1 25˚C 25˚ 0 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 ...

Page 7

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE Pulsed 4 100 150 Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 ...

Page 8

P-channel DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 100 120 140 160 T - Ambient Temperature - ˚C A FORWARD BIAS SAFE OPERATING AREA 100 I D(pulse) ...

Page 9

FORWARD TRANSFER CHARACTERISTICS 100 Pulsed 150˚C A 75˚C 1 0.1 25˚C 25˚C 0. 0.001 Gate to Source Voltage - V GS FORWARD TRANSFER ADMITTANCE vs. DRAIN ...

Page 10

DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 Pulsed 4 4 100 T - Channel Temperature - ˚C ch CAPACITANCE vs. DRAIN TO SOURCE ...

Page 11

The information in this document is current as of April, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date ...

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