NTGD4169F ON Semiconductor, NTGD4169F Datasheet

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NTGD4169F

Manufacturer Part Number
NTGD4169F
Description
Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet

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Part Number:
NTGD4169FT1G
Manufacturer:
ONSemico
Quantity:
66 000
Part Number:
NTGD4169FT1G
Manufacturer:
ON Semiconductor
Quantity:
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NTGD4169F
Power MOSFET and
Schottky Diode
30 V, 2.9 A, N−Channel with Schottky
Barrier Diode, TSOP−6
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 1
MAXIMUM RATINGS
SCHOTTKY MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
N−Channel
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Junction−to−Ambient – Steady State (Note
1)
Junction−to−Ambient – t ≤ 5 s (Note 1)
Fast Switching
Low Gate Change
Low R
Low V
Independently Connected Devices to Provide Design Flexibility
This is a Pb−Free Device
DC−DC Converters
Portable Devices like PDA’s, Cellular Phones, and Hard Drives
[1 oz] including traces).
DS(on)
F
Schottky Diode
Parameter
Parameter
Parameter
Steady State
Steady State
t ≤ 5 s
t ≤ 5 s
(T
J
= 25°C unless otherwise noted)
T
T
T
T
t
p
A
A
A
A
= 10 ms
= 25°C
= 85°C
= 25°C
= 25°C
(T
J
= 25°C unless otherwise stated)
T
Symbol
Symbol
Symbol
J
V
V
R
R
V
, T
I
P
V
RRM
DSS
DM
T
I
I
I
qJA
qJA
GS
D
S
F
D
R
L
STG
−25 to
Value
Value
Value
±12
150
260
140
110
2.6
1.9
2.9
0.9
1.1
8.6
0.9
30
30
30
1
1
°C/W
°C/W
Unit
Unit
Unit
°C
°C
W
V
V
A
A
A
V
V
A
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
G
TD = Specific Device Code
M
G
(Note: Microdot may be in either location)
CASE 318G
V
V
STYLE 15
N−Channel MOSFET
(BR)DSS
TSOP−6
30 V
R
30 V
Max
= Date Code
G
A
S
1
ORDERING INFORMATION
= Pb−Free Package
1
2
3
N−CHANNEL MOSFET
D
SCHOTTKY DIODE
http://onsemi.com
PIN CONNECTION
125 mW @ 2.5 V
90 mW @ 4.5 V
S
R
(Top View)
DS(on)
V
0.53 V
F
Publication Order Number:
Max
Max
Schottky Diode
1
MARKING
DIAGRAM
A
K
6
5
4
NTGD4169F/D
TD MG
G
K
N/C
D
I
D
I
2.6 A
2.2 A
1.0 A
F
Max
Max

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NTGD4169F Summary of contents

Page 1

... Pb−Free Package (Note: Microdot may be in either location) PIN CONNECTION N (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Publication Order Number: NTGD4169F/D Max D 2 Max F 1.0 A ...

Page 2

MOSFET ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES ...

Page 3

... Maximum Instantaneous Reverse Current SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Parameter Capacitance ORDERING INFORMATION Device NTGD4169FT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) J Symbol ...

Page 4

TYPICAL CHARACTERISTICS N−CHANNEL 9 4 8.0 3.5 V 2.5 V 7.0 6.0 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 3 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.20 ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 7. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1 250 mA ...

Page 6

Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 TYPICAL CHARACTERISTICS SCHOTTKY 125°C J 25°C 1 85°C −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0 INSTANTANEOUS FORWARD ...

Page 7

... SOURCE 3. GATE 4. DRAIN 5. N/C 6. CATHODE 0.7 0.028 mm SCALE 10:1 inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTGD4169F/D MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10° ...

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