NTGD4169F ON Semiconductor, NTGD4169F Datasheet - Page 2

• Manufacturer Part Number: NTGD4169F
• Description: Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

2. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 3)
DRAIN−TO−SOURCE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
Characteristic
V
V
V
(BR)DSS
Symbol
V
GS(TH)
Q
R
Q
t
(BR)DSS
C
t
C
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
DSS
GSS
G(TH)
t
T
OSS
RSS
RR
T
FS
ISS
t
t
SD
(T
GS
GD
RR
r
f
a
b
J
/T
/T
= 25°C unless otherwise noted)
http://onsemi.com
J
J
V
V
V
V
V
V
IS = 0.9 A
GS
GS
GS
V
V
DS
GS
V
GS
V
V
V
GS
GS
2
V
I
GS
D
DS
GS
GS
= 0 V, d
= 4.5 V
= 2.5 V
DS
= 0 V,
= 24 V
= 0 V
= 1.0 A, R
= 4.5 V, V
= 4.5 V, V
Test Condition
= 0 V, f = 1.0 MHz,
= 0 V, V
= V
= 0 V, I
= 15 V, I
V
IS = 0.9 A
I
D
DS
DS
= 2.0 A
IS
, I
= 15 V
/d
D
GS
D
t
G
DS
DS
D
= 250 mA
= 250 mA
= 100 A/ms,
= 6.0 W
= 2.6 A
= ±12 V
T
T
I
I
= 15 V,
= 15 V,
T
D
D
J
J
J
= 2.6 A
= 2.2 A
= 25°C
= 85°C
= 25°C
Min
0.5
30
21.4
−3.4
Typ
295
0.9
2.6
3.7
0.6
0.9
0.8
7.0
4.0
2.0
0.7
8.0
5.0
3.0
3.0
52
67
48
27
14
Max
100
125
1.0
1.5
5.5
1.2
10
90
mV/°C
mV/°C
Unit
mW
nA
nC
nC
mA
pF
ns
ns
V
V
S
V