NTMFS4108N ON Semiconductor, NTMFS4108N Datasheet - Page 2

• Manufacturer Part Number: NTMFS4108N
• Description: Power Mosfet 30 V, 35 A, Single N-channel So-8 Flat Lead Package
• Manufacturer: ON Semiconductor

3. Surface-mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127″ sq. [1 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412″ sq.).
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
THERMAL RESISTANCE RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS, V
DRAIN-SOURCE DIODE CHARACTERISTICS
Junction-to-Case (Drain)
Junction-to-Ambient - Steady State (Note 3)
Junction-to-Ambient - t v10 s (Note 3)
Junction-to-Ambient - Steady State (Note 4)
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain-to-Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
emperature Coefficient
T
Characteristic
GS
Rating
= 10 V (Note 6)
(T
J
= 25°C unless otherwise noted)
V
V
V
(BR)DSS
Symbol
Q
V
GS(TH)
R
Q
t
(BR)DSS
t
C
C
d(OFF)
GS(TH)
C
I
I
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
GSS
G(TH)
t
DSS
R
OSS
RSS
RR
t
t
ISS
t
FS
GS
GD
t
SD
RR
a
b
r
f
G
/T
/T
J
http://onsemi.com
J
NTMFS4108N
V
V
V
V
GS
GS
GS
GS
V
= 0 V, V
= 0 V, f = 1.0 MHz, V
V
= 0 V, I
GS
= 4.5 V, V
2
V
V
V
GS
V
I
V
V
D
GS
GS
DS
GS
= 0 V, d
GS
DS
= 1.0 A, R
= 4.5 V, V
Test Condition
= V
= 0 V, I
= 0 V, V
= 4.5 V, I
= 10 V, I
= 15 V, I
S
DS
I
S
= 6.0 A
DS
DS
= 24 V
= 6.0 A
IS
, I
/d
D
= 24 V, I
D
GS
G
t
DS
D
= 250 mA
D
D
= 250 mA
= 100 A/ms,
= 6.0 W
= 21 A
= 10 A
= 19 A
= 20 V
= 15 V,
T
T
T
T
DS
J
D
J
J
J
= 125°C
= 125°C
= 21 A
= 25°C
= 25°C
= 15 V
Symbol
R
R
R
R
qJC
qJA
qJA
qJA
Min
1.0
30
6000
1200
0.72
0.65
Typ
700
140
7.5
2.7
1.8
0.7
21
25
54
11
16
23
45
60
70
41
20
21
45
Max
1.25
138
53
20
Max
100
1.0
2.5
3.4
2.2
1.1
25
°C/W
Unit
mV/°C
mV/°C
Unit
mW
mA
nA
pF
nC
nC
ns
ns
W
V
V
S
V