NTTD4401F ON Semiconductor, NTTD4401F Datasheet

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NTTD4401F

Manufacturer Part Number
NTTD4401F
Description
Fetky Power Mosfet And Schottky Diode
Manufacturer
ON Semiconductor
Datasheet
NTTD4401F
FETKYt Power MOSFET
and Schottky Diode
−20 V, −3.3 A P−Channel with 20 V,
1.0 A Schottky Diode, Micro8t Package
MOSFETs packaged with industry leading, low forward drop, low
leakage Schottky Barrier Diodes to offer high efficiency components in
a space saving configuration. Independent pinouts for TMOS and
Schottky die allow the flexibility to use a single component for
switching and rectification functions in a wide variety of applications.
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 6
MOSFET MAXIMUM RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Power Dissipation
Continuous Drain
Power Dissipation
Pulsed Drain
Operating Junction and
Single Pulse Drain−to−Source Avalanche
Lead Temperature for Soldering Purposes
The FETKY product family incorporates low R
Space Savings
other Portable Products
Low V
Lower Component Placement and Inventory Costs along with Board
Logic Level Gate Drive – Can be Driven by Logic ICs
Pb−Free Package is Available
Buck Converter
Synchronous Rectification
Low Voltage Motor Control
Load Management in Battery Packs, Chargers, Cell Phones, and
(Cu area = 1.127 in sq [1 oz] including traces).
(Cu area = 0.172 in sq).
Current (Note 1)
(Note 1)
Current (Note 2)
(Note 2)
Current
Storage Temperature
Energy Starting T
(1/8″ from case for 10 s)
F
and Low Leakage Schottky Diode
Rating
A
= 25°C (t v 10 s)
Steady
Steady
State
State
t = 10 ms
T
T
T
T
T
T
A
A
A
A
A
A
(T
= 25°C
= 100°C
= 25°C
= 25°C
= 100°C
= 25°C
A
= 25°C unless otherwise noted)
T
Symbol
J
V
EAS
V
, T
I
P
P
DSS
DM
T
I
I
GS
D
D
D
D
L
STG
DS(on)
, true logic level
−55 to
Value
$10
−3.3
−2.1
1.42
−2.4
−1.5
0.78
−20
−10
150
150
260
1
Unit
mJ
°C
°C
W
W
V
V
A
A
A
†For information on tape and reel specifications,
NTTD4401FR2
NTTD4401FR2G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
G
CASE 846A
V
8
V
(BR)DSS
−20 V
P−Channel MOSFET
(Note: Microdot may be in either location)
R
20 V
Micro8
Device
Max
MOSFET PRODUCT SUMMARY
SCHOTTKY DIODE SUMMARY
BG
WW
G
ORDERING INFORMATION
1
S
http://onsemi.com
100 mW @ −2.7 V
70 mW @ −4.5 V
I
F
= Specific Device Code
= Work Week
= Pb−Free Package
2.0 A
D
(Pb−Free)
R
Max
Package
DS(on)
Micro8
Micro8
MARKING DIAGRAM &
PIN ASSIGNMENT
Publication Order Number:
Typ
600 mV @ I
8
1
C C D D
A A S G
Schottky Diode
4000/Tape & Reel
4000/Tape & Reel
BG G
WW
G
V
Shipping
NTTD4401F/D
F
C
A
Max
F
I
−3.3 A
−2.7 A
D
= 2.0 A
Max

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NTTD4401F Summary of contents

Page 1

... MARKING DIAGRAM & PIN ASSIGNMENT Micro8 Specific Device Code WW = Work Week G = Pb−Free Package ORDERING INFORMATION † Device Package Shipping Micro8 4000/Tape & Reel Micro8 4000/Tape & Reel (Pb−Free) Publication Order Number: NTTD4401F/D ...

Page 2

... Surge applied at rated load conditions, half−wave, single phase, 60 Hz. 5. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 oz] including traces). 6. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq). 7. Body diode leakage current. NTTD4401F (T = 25°C unless otherwise noted 100° ...

Page 3

... SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage Reverse Leakage Current Forward Voltage Voltage Rate of Change NTTD4401F (T = 25°C unless otherwise noted) J Symbol Test Condition 1 25° 125° 25° 1 125°C ...

Page 4

... Figure 3. On−Resistance vs. Gate−to−Source Voltage 1 −3 −4 1.4 1.2 1 0.8 0.6 −50 − JUNCTION TEMPERATURE (°C) J, Figure 5. On−Resistance Variation with Temperature NTTD4401F 25° > = − 25° 100° −V , GATE−TO−SOURCE VOLTAGE (VOLTS) GS Figure 2 ...

Page 5

... GATE RESISTANCE (W) G, Figure 9. Resistive Switching Time Variation vs. Gate Resistance 25°C J 1.6 1.2 0.8 0.4 0 0.4 0.5 0.6 0.7 −V SOURCE−TO−DRAIN VOLTAGE (VOLTS) SD, Figure 11. Diode Forward Voltage vs. Current NTTD4401F 25° iss oss C rss TOTAL GATE CHARGE (nC) g Figure 8. Gate− ...

Page 6

... TYPICAL SCHOTTKY ELECTRICAL CHARACTERISTICS 125°C J 1.0 85°C 25°C −40 °C 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0 INSTANTANEOUS FORWARD VOLTAGE (VOLTS) F Figure 14. Typical Forward Voltage NTTD4401F Normalized Steady State (1 inch pad) ∅ja 0.0125 W 0.0563 W 0.110 W 0.273 W 0.021 F 0.137 F 1.15 F 2.93 F 1E−01 1E+00 1E+03 t, TIME (s) Figure 13. FET Thermal Response 10 85°C 1.0 0.1 0.8 ...

Page 7

... REVERSE VOLTAGE (VOLTS) R Figure 16. Typical Reverse Current 1000 TYPICAL CAPACITANCE 170 pF 100 REVERSE VOLTAGE (VOLTS) R Figure 18. Typical Capacitance 0.7 0.6 0.5 0.4 0 0.2 0 NTTD4401F 1E−1 1E−2 1E−3 1E−4 1E−5 1E− Figure 17. Maximum Reverse Current 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 SQUARE WAVE ...

Page 8

... BSC 0.026 BSC 0.40 0.55 0.70 0.016 0.021 4.75 4.90 5.05 0.187 0.193 5.28 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTTD4401F/D MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 ...

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