NTTD4401F ON Semiconductor, NTTD4401F Datasheet - Page 2

• Manufacturer Part Number: NTTD4401F
• Description: Fetky Power Mosfet And Schottky Diode
• Manufacturer: ON Semiconductor

3. Rated V
4. Surge applied at rated load conditions, half−wave, single phase, 60 Hz.
5. Surface−mounted on FR4 board using 1 inch sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
6. Surface−mounted on FR4 board using the minimum recommended pad size (Cu area = 0.172 in sq).
7. Body diode leakage current.
SCHOTTKY DIODE MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS
DRAIN−SOURCE DIODE CHARACTERISTICS
Peak Repetitive Reverse Voltage
Average Forward Current (Rated V
Peak Repetitive Forward Current (Note 3)
Non−Repetitive Peak Surge Current (Note 4)
Junction−to−Ambient – Steady State (Note 5)
Junction−to−Ambient – Steady State (Note 6)
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current (Note 7)
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller’’ Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Temperature Coefficient
R
, square wave, 20 kHz, T
Characteristic
Rating
R
, T
A
Rating
= 105°C.
A
= 100°C)
V
V
Symbol
Q
V
GS(TH)
R
t
(BR)DSS
C
C
t
(T
d(OFF)
GS(TH)
I
I
C
G(TOT)
Q
Q
d(ON)
Q
DS(on)
V
g
DSS
GSS
t
OSS
RSS
RR
t
t
ISS
A
FS
GD
t
t
SD
GS
RR
a
b
r
f
= 25°C unless otherwise noted)
(T
/T
A
J
= 25°C unless otherwise noted)
http://onsemi.com
V
NTTD4401F
GS
V
V
V
= 0 V, T
GS
V
V
V
GS
V
GS
V
V
V
I
GS
GS
D
GS
V
DS
GS
GS
DS
2
= 0 V, d
GS
= −4.5 V, V
= −4.5 V, V
= −3.3 A, R
Test Condition
= −4.5 V, I
= −2.5 V, I
= V
= −10 V, I
= 0 V, V
= 0 V, f = 1.0 MHz,
= 0 V, V
V
= 0 V, I
J
I
I
V
D
S
DS
DS
= 125°C, V
GS
= −3.3 A
= −3.3 A
IS
, I
= −16 V
−
−
= 0 V
/dt = 100 A/ms,
D
GS
S
DS
D
DS
DD
= −250 mA
D
D
G
= −2.0 A
= −2.7 A
= −16 V
= ±10 V
Symbol
= −3.3 A
= −1.2 A
= 6.0 W
= −16 V,
= −10 V,
R
R
DS
qJA
qJA
= −16 V
Symbol
I
I
FRM
FSM
I
V
O
FET
160
88
−0.5
Min
−20
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−0.88
0.025
Schottky
Value
Typ
100
550
200
2.5
4.2
1.5
5.0
70
50
10
35
33
29
37
16
21
1.0
2.0
11
20
20
−
−
−
−
−
135
250
±100
Max
−1.0
−1.5
−1.0
0.05
−25
150
750
300
175
3.0
90
18
10
20
65
60
55
50
−
−
−
−
−
°C/W
°C/W
Unit
Unit
V
A
A
A
mV/°C
Unit
mW
nA
nC
nC
mA
pF
ns
ns
V
V
S
V