SIR466DP Vishay, SIR466DP Datasheet - Page 3

• Manufacturer Part Number: SIR466DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68879
S-82018-Rev. A, 01-Sep-08
0.0050
0.0045
0.0040
0.0035
0.0030
0.0025
10
70
56
42
28
14
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0
0.0
0
0
V
I
D
GS
= 10 A
0.5
= 4.5 V
14
9
V
V
GS
DS
Output Characteristics
Q
g
V
= 10 thru 4 V
- Drain-to-Source Voltage (V)
V
I
DS
- Total Gate Charge (nC)
D
GS
- Drain Current (A)
Gate Charge
= 10 V
1.0
28
18
= 10 V
V
DS
= 15 V
1.5
27
42
V
V
DS
GS
= 20 V
2.0
56
36
= 3 V
New Product
2.5
70
45
3500
2800
2100
1400
700
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
0
8
6
4
2
0
- 50
0
0
C rss
On-Resistance vs. Junction Temperature
I
- 25
D
T
= 15 A
C
6
= 125 °C
1
T
V
V
C
GS
DS
T
0
= 25 °C
J
Transfer Characteristics
C oss
C iss
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
25
12
2
Capacitance
50
Vishay Siliconix
T
C
18
3
= - 55 °C
V
75
GS
SiR466DP
= 10 V
100
V
www.vishay.com
GS
24
4
= 4.5 V
125
150
30
5
3