SIR466DP Vishay, SIR466DP Datasheet - Page 4

• Manufacturer Part Number: SIR466DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR466DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
- 50
1
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
T
V
J
SD
0
= 150 °C
- Source-to-Drain Voltage (V)
Threshold Voltage
0.4
T
J
25
- Temperature (°C)
0.6
50
I
D
75
= 250 µA
0.8
0.01
100
T
0.1
100
10
Limited by R
J
0.01
1
= 25 °C
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Single Pulse
125
= 5 mA
T
GS
A
= 25 °C
> minimum V
New Product
DS(on)
V
1.2
150
DS
0.1
- Drain-to-Source Voltage (V)
*
GS
at which R
1
BVDSS Limited
0.020
0.016
0.012
0.008
0.004
0.000
DS(on)
250
200
150
100
50
0
0
0 .
0
10
0
is specified
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1
1 ms
10 ms
100 ms
1 s
10 s
DC
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-82018-Rev. A, 01-Sep-08
Document Number: 68879
6
7
1
T
I
T
D
J
8
J
= 15 A
= 125 °C
= 25 °C
9
10
1
0