SIR474DP Vishay, SIR474DP Datasheet - Page 4

• Manufacturer Part Number: SIR474DP
• Description: N-channel 30-v D-s Mosfet
• Manufacturer: Vishay

SiR474DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.001
- 0.2
- 0.4
- 0.6
- 0.8
0.01
100
0.4
0.2
0.0
0.1
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
T
0
J
= 150 °C
- Source-to-Drain Voltage (V)
0.4
Threshold Voltage
T
J
25
- Temperature (°C)
0.6
50
75
I
D
0.8
= 250 µA
T
0.01
J
100
100
0.1
10
= 25 °C
1
0.1
1.0
I
D
Safe Operating Area, Junction-to-Ambient
* V
Limited by R
125
= 5 mA
Single Pulse
T
GS
A
= 25 °C
> minimum V
1.2
V
150
DS
- Drain-to-Source Voltage (V)
DS(on)
1
*
GS
at which R
BVDSS Limited
DS(on)
10
0.05
0.04
0.03
0.02
0.01
0.00
80
64
48
32
16
0
0
0 .
0
is specified
0
1
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
100 ms
1 s
10 s
1
1 ms
DC
2
V
0.01
100
GS
3
- Gate-to-Source Voltage (V)
4
Time (s)
0.1
5
S-82749-Rev. A, 10-Nov-08
Document Number: 68996
6
7
1
T
T
J
J
= 125 °C
8
= 25 °C
9
10
1
0