SIE726DF Vishay, SIE726DF Datasheet

no-image

SIE726DF

Manufacturer Part Number
SIE726DF
Description
N-channel 30-v D-s Mosfet With Schottky Diode
Manufacturer
Vishay
Datasheet
Document Number: 68626
S-80891-Rev. A, 21-Apr-08
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Package Drawing
http://www.vishay.com/doc?72945
Top surface is connected to pins 1, 5, 6, and 10
V
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
DS
30
10
D
1
D
(V)
Ordering Information: SiE726DF-T1-E3 (Lead (Pb)-free)
G
G
2
9
0.0024 at V
0.0033 at V
S
Top View
3
S
8
R
N-Channel 30-V (D-S) MOSFET with Schottky Diode
D
DS(on)
S
4
S
GS
7
GS
http://www.vishay.com/ppg?73257
(Ω)
= 4.5 V
= 10 V
e
D
D
5
6
J
PolarPAK
= 150 °C)
Silicon
Limit
175
149
6
D
5
I
D
(A)
Package
7
Bottom View
4
a
Limit
S
60
60
d, e
T
T
T
T
T
T
L = 0.1 mH
T
T
T
T
8
C
C
C
C
C
A
A
A
A
A
). The PolarPAK is a leadless package. The end of the lead terminal is exposed copper
3
A
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
= 25 °C
= 70 °C
= 25 °C, unless otherwise noted
Q
G
9
g
50 nC
2
(Typ.)
New Product
10
D
1
Symbol
T
J
V
V
E
I
I
P
, T
DM
I
I
AS
DS
GS
D
AS
S
D
FEATURES
APPLICATIONS
stg
• SkyFET™ Monolithic TrenchFET
• Ultra Low Thermal Resistance Using
• Leadframe-Based New Encapsulated Package
• Low Q
• 100 % R
• Synchronous Rectification
• DC/DC
• Low-Side Switch
Power MOSFET and Schottky Diode
Top-Exposed PolarPAK
Double-Sided Cooling
- Die Not Exposed
- Same Layout Regardless of Die Size
gd
/Q
g
N-Channel MOSFET
and UIS Tested
gs
Ratio Helps Prevent Shoot-Through
60
http://www.vishay.com/ppg?68626
175 (Silicon Limit)
G
a
For Related Documents
(Package Limit)
- 50 to 150
4.3
5.2
3.3
Limit
35
28
± 20
125
125
60
60
260
30
80
50
80
b, c
b, c
b, c
b, c
b, c
a
a
®
Package for
D
S
Vishay Siliconix
®
Schottky Diode
SiE726DF
www.vishay.com
Unit
RoHS
COMPLIANT
mJ
°C
W
V
A
1

Related parts for SIE726DF

SIE726DF Summary of contents

Page 1

... Top View Top surface is connected to pins and 10 Ordering Information: SiE726DF-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current ...

Page 2

... SiE726DF Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain Top Maximum Junction-to-Case (Source) Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Maximum under Steady State conditions is 68 °C/W. c. Measured at source pin (on the side of the package). ...

Page 3

... Total Gate Charge (nC) g Gate Charge Document Number: 68626 S-80891-Rev. A, 21-Apr-08 New Product 0.8 1.0 10000 = 4 100 125 SiE726DF Vishay Siliconix 125 Gate-to-Source Voltage (V) GS Transfer Characteristics C iss ...

Page 4

... SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 1,E+00 IDSX 1,E-01 1,E-02 IDSX 1,E-03 IDSX 1,E-04 1,E-05 1,E- Temperature (°C) J Reverse Current vs. Junction Temperature www.vishay.com 4 New Product 0.008 ...

Page 5

... Document Number: 68626 S-80891-Rev. A, 21-Apr-08 New Product 140 120 100 100 125 150 25 = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper SiE726DF Vishay Siliconix 50 75 100 125 150 T - Case Temperature (°C) C Power Derating, Junction-to-Case www.vishay.com 5 ...

Page 6

... SiE726DF Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Case (Drain Top Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 7

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

Related keywords