SIE726DF Vishay, SIE726DF Datasheet - Page 4

• Manufacturer Part Number: SIE726DF
• Description: N-channel 30-v D-s Mosfet With Schottky Diode
• Manufacturer: Vishay

SiE726DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
1,E+00
1,E-02
1,E-03
1,E-04
1,E-05
1,E-06
1,E-01
100
10
1
0.0
0
Reverse Current vs. Junction Temperature
IDSX at 30 V
Source-Drain Diode Forward Voltage
25
0.2
V
SD
IDSX at 20 V
T
J
- Source-to-Drain Voltage (V)
= 150 °C
T
50
J
- Temperature (°C)
0.4
IDSX at 10 V
75
0.6
Limited by R
0.01
100
0.1
10
100
1
0.01
Safe Operating Area, Junction-to-Ambient
T
* V
J
0.8
= 25 °C
GS
125
DS(on)
> minimum V
V
Single Pulse
0.1
*
T
DS
New Product
A
150
= 25 °C
1.0
- Drain-to-Source Voltage (V)
GS
at which R
1
BVDSS
Limited
DS(on)
10
0.008
0.006
0.004
0.002
0.000
is specified
50
40
30
20
10
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
10 s
DC
1 s
100
0.1
2
V
GS
- Gate-to-Source Voltage (V)
1
4
Time (s)
S-80891-Rev. A, 21-Apr-08
Document Number: 68626
10
6
T
I
T
D
J
J
100
= 25 A
= 125 °C
= 25 °C
8
1000
10