RTQ030P02 ROHM Co. Ltd., RTQ030P02 Datasheet - Page 2

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RTQ030P02

Manufacturer Part Number
RTQ030P02
Description
2.5v Drive Pch Mos Fet
Manufacturer
ROHM Co. Ltd.
Datasheet

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Transistor
Forward voltage
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Foward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Electrical characteristics (Ta=25°C)
Body diode characteristics (Source-drain) (Ta=25°C)
∗PULSED
Parameter
Parameter
V
Symbol
Symbol
R
V
(BR)DSS
V
t
t
Qgs
Qgd
I
C
I
C
C
GS(th)
DS(on)
d(on)
d(off)
Qg
GSS
Y
DSS
SD
t
t
oss
iss
rss
r
fs
f
Min.
−0.7
Min.
−20
2.0
Typ.
Typ.
110
800
150
100
9.0
1.6
4.6
60
65
15
27
50
20
Max.
Max.
−1.2
−2.0
150
±10
80
90
−1
Unit
Unit
mΩ
mΩ
mΩ
µA
µA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
S
V
V
I
V
V
I
I
V
I
V
f = 1MHz
I
V
V
R
R
V
V
I
D
D
D
D
I
D
S
GS
DS
DS
DS
D
=− 1
=−3 A, V
=−3 A, V
DS
DD
GS
DD
GS
=−1.5 A, V
L
G
=−1 A, V
=− 1.5A
=− 3A
= 10Ω
= 10Ω
=− 20V, V
=− 10V, I
=−10 V, I
= ±12V, V
=− 10V, V
=−4.5 V
=−4.5 V
mA,
− 15V
− 15V
, V
GS
GS
GS
GS
Conditions
GS
Conditions
D
=−4.5 V
D
=−4 V
=0 V
GS
GS
DS
=− 1
=− 1.5A
= 0V
=−2.5 V
= 0V
= 0V
= 0V
mA
RTQ030P02
Rev.A
2/4

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