RTQ030P02 ROHM Co. Ltd., RTQ030P02 Datasheet - Page 3

• Manufacturer Part Number: RTQ030P02
• Description: 2.5v Drive Pch Mos Fet
• Manufacturer: ROHM Co. Ltd.

Transistor
Electrical characteristic curves
0.001
10000
0.01
1000
1000
0.1
100
10
100
10
10
1
Fig.1 Typical Transfer Characteristics
0.01
0.1
0
Ta=125°C
Fig.4 Static Drain−Source On−State
Ta=125°C
0.5
−25°C
−25°C
Fig.7 Typical Capactitance
75°C
25°C
75°C
25°C
vs.Drain−Source Voltage
Drain−Source Voltage : −V
Gate−Source Voltage : −V
Drain Current : −I
Resistance
1.0
0.1
1.5
2.0
1
1
vs.Drain−Current
2.5
D
[A]
3.0
V
pulsed
10
DS
GS
DS
V
pulsed
[V]
[V]
GS
=−10V
3.5
Ta=25 C
f=1MHz
V
C
=−4V
GS
C
oss
C
rss
=0V
iss
4.0
100
10
1000
1000
100
100
1000
10
10
0.01
100
1
0.1
10
Fig.2 Static Drain−Source On−State
0.1
V
Fig.5 Static Drain−Source On−State
Ta=125°C
Fig.8 Switching Characteristics
GS
−4.5V
=−4V
−10V
t
d(off)
−25°C
Resistance
75°C
25°C
Drain Current : −I
Resistance
Drain Current : −I
Drain Current : −I
t
d(on)
0.1
t
t
f
r
vs.Drain Current
1
1
vs.Drain−Current
D
D
[A]
D
[A]
1
[A]
Ta=25 C
V
V
R
pulsed
DD
GS
G
V
pulsed
Ta=25 C
pulsed
=10Ω
GS
=−15V
=−4.5V
=−2.5V
10
10
10
1000
0.01
100
0.1
10
8
7
6
5
4
3
2
1
0
10
1
0.1
0
0
Fig.3 Static Drain−Source On−State
Ta=125°C
Fig.9 Dynamic Input Characteristics
Ta=125°C
Fig.6 Reverse Drain Current
−25°C
−25°C
75°C
25°C
75°C
25°C
2
Resistance
Source−Drain Voltage : −V
Total Gate Charge : Qg[nC]
0.5
Drain Current : −I
vs.
4
Source-Drain Voltage
RTQ030P02
Rev.A
1.0
vs.Drain Current
6
1
D
8
[A]
1.5
SD
V
pulsed
Ta=25 C
V
I
R
pulsed
D
[V]
GS
DD
V
pulsed
G
=−3.0V
1
GS
=10Ω
0
=−4.5V
=−15V
=0V
3/4
2.0
1
10
2