TK20A60U TOSHIBA Semiconductor CORPORATION, TK20A60U Datasheet

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TK20A60U

Manufacturer Part Number
TK20A60U
Description
Toshiba Field Effect Transistor Silicon N Channel Mos Type Dtmos?
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
This transistor is an electrostatic-sensitive device. Handle with care.
Low drain-source ON-resistance: R
High forward transfer admittance: ⎪Y
Low leakage current: I
Enhancement-mode: V
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ)
Characteristics
= 90 V, T
DC
Pulse (t = 1 ms)
ch
DSS
th
= 25°C (initial), L = 0.63 mH, R
= 3.0 to 5.0 V (V
(Note 1)
(Note 1)
(Note 3)
(Note 2)
= 100 μA (V
DS (ON)
(Ta = 25°C)
Symbol
TK20A60U
V
V
fs
E
E
T
I
I
T
P
DS
GSS
DSS
I
DP
AR
⎪ = 12 S (typ.)
AS
AR
stg
D
ch
R
R
D
Symbol
DS
th (ch-a)
th (ch-c)
= 600 V)
= 0.165 Ω (typ.)
= 10 V, I
-55 to 150
Rating
600
±30
144
150
4.5
D
20
40
45
20
1
G
= 1 mA)
Max
2.78
62.5
= 25 Ω, I
Unit
AR
mJ
mJ
°C
°C
°C/W
°C/W
W
V
V
A
A
Unit
= 20 A
Weight: 1.7 g (typ.)
JEDEC
JEITA
TOSHIBA
Internal Connection
1: Gate
2: Drain
3: Source
1
2-10U1B
TK20A60U
SC-67
2008-08-28
Unit: mm
2
3

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TK20A60U Summary of contents

Page 1

... 4 150 ° -55 to 150 °C stg Symbol Max Unit R 2.78 °C/W th (ch-c) R 62.5 °C/W th (ch- Ω TK20A60U Unit Gate 2: Drain 3: Source ⎯ JEDEC JEITA SC-67 TOSHIBA 2-10U1B Weight: 1.7 g (typ.) Internal Connection 2008-08-28 ...

Page 2

... I DR ⎯ I DRP = DSF /dt = 100 A/μ TK20A60U Min Typ. Max ⎯ ⎯ ±1 ⎯ ⎯ 100 ⎯ ⎯ 600 ⎯ 3.0 5.0 ⎯ 0.165 0.19 ⎯ ⎯ ⎯ 1470 ⎯ ⎯ ...

Page 3

... Drain−source voltage Gate−source voltage V 1 Common source Tc = 25°C Pulse test 0.1 0.01 100 0.1 3 TK20A60U I – Common source Tc = 25°C Pulse test 7 – Common source Tc = 25° ...

Page 4

... C oss C oss 2 Common source rss C rss Pulse test 0 −80 100 (V) 500 V DS 400 300 200 100 0 160 0 4 TK20A60U − 0.4 0.8 1.2 1.6 (V) DS − − 120 160 Case temperature Tc (°C) ...

Page 5

... Pulse width t (s) w 200 100 μs * 160 120 Channel temperature (initial) T 1000 ( −15 V TEST CIRCUIT = 25 Ω 0. TK20A60U t T Duty = t (ch-c) = 2.78°C – 100 125 150 (° VDSS ...

Page 6

... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 TK20A60U 20070701-EN GENERAL 2008-08-28 ...

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