NTR4501N ON Semiconductor, NTR4501N Datasheet
NTR4501N
Manufacturer Part Number
NTR4501N
Description
Power Mosfet 20 V, 3.2 A, Single Nchannel, Sot23
Manufacturer
ON Semiconductor
Datasheet
1.NTR4501N.pdf
(5 pages)
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Part Number:
NTR4501NT1
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Part Number:
NTR4501NT1
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ON
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NTR4501NT1G
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NTR4501NT1G/TR1
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Part Number:
NTR4501NT3G
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ONSemico
Quantity:
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NTR4501NT3G
Manufacturer:
ON/安森美
Quantity:
20 000
NTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 7
MAXIMUM RATINGS
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Steady State Power
Pulsed Drain Current
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Packages are Available
Load/Power Switch for Portables
Load/Power Switch for Computing
DC−DC Conversion
(Cu area = 1.127 in sq [1 oz] including traces).
Current (Note 1)
Dissipation (Note 1)
(1/8” from case for 10 s)
Parameter
Parameter
(T
J
Steady
= 25°C unless otherwise stated)
State
Steady State
t
p
= 10 ms
T
T
A
A
= 25°C
= 85°C
Symbol
Symbol
V
R
R
V
T
I
P
T
DSS
T
I
DM
I
stg
qJA
qJA
GS
D
S
J
D
L
,
−55 to
Value
1.25
10.0
Max
±12
150
260
100
300
3.2
2.4
1.6
20
1
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
A
†For information on tape and reel specifications,
NTR4501NT1
NTR4501NT1G
NTR4501NT3
NTR4501NT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
V
*Date Code orientation and/or overbar may
(BR)DSS
Device
vary depending upon manufacturing location.
20 V
CASE 318
STYLE 21
(Note: Microdot may be in either location)
SOT−23
2
ORDERING INFORMATION
TR1
M
G
3
G
http://onsemi.com
70 mW @ 4.5 V
88 mW @ 2.5 V
(Pb−Free)
(Pb−Free)
Package
N−Channel
= Device Code
= Date Code*
= Pb−Free Package
SOT−23
SOT−23
SOT−23
SOT−23
R
DS(on)
MARKING DIAGRAM &
Publication Order Number:
D
PIN ASSIGNMENT
Typ
1
Gate
S
10,000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
TR1 M G
Drain
Shipping†
G
NTR4501N/D
Source
3
(Note 1)
I
D
3.6 A
3.1 A
Max
2
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NTR4501N Summary of contents
Page 1
... R qJA vary depending upon manufacturing location. R 300 qJA Device NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max DS(on) ...
Page 2
Electrical Characteristics (T = 25°C unless otherwise specified) J Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature ...
Page 3
4 1.4 ...
Page 4
C 200 150 100 rss 0 0 2.5 5 7.5 10 12.5 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 3 4.5 V ...
Page 5
... L 0.10 0.20 0.30 0.004 0.008 L1 0.35 0.54 0.69 0.014 0.021 H 2.10 2.40 2.64 0.083 0.094 E STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR4501N/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...