NTR4501N ON Semiconductor, NTR4501N Datasheet

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NTR4501N

Manufacturer Part Number
NTR4501N
Description
Power Mosfet 20 V, 3.2 A, Single Nchannel, Sot23
Manufacturer
ON Semiconductor
Datasheet
NTR4501N
Power MOSFET
20 V, 3.2 A, Single N−Channel, SOT−23
Features
Leading Planar Technology for Low Gate Charge / Fast Switching
2.5 V Rated for Low Voltage Gate Drive
SOT−23 Surface Mount for Small Footprint
Pb−Free Packages are Available
Applications
Load/Power Switch for Portables
Load/Power Switch for Computing
DC−DC Conversion
MAXIMUM RATINGS
(T
= 25°C unless otherwise stated)
J
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Steady
T
= 25°C
A
Current (Note 1)
State
T
= 85°C
A
Steady State Power
Steady State
Dissipation (Note 1)
Pulsed Drain Current
t
= 10 ms
p
Operating Junction and Storage Temperature
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS
Parameter
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2008
June, 2008 − Rev. 7
V
(BR)DSS
20 V
Symbol
Value
Unit
V
20
V
DSS
V
±12
V
GS
I
3.2
A
D
2.4
A
P
1.25
W
D
1
I
10.0
A
DM
2
T
,
−55 to
°C
J
SOT−23
T
150
stg
CASE 318
I
1.6
A
STYLE 21
S
T
260
°C
L
(Note: Microdot may be in either location)
Symbol
Max
Unit
*Date Code orientation and/or overbar may
100
°C/W
R
qJA
vary depending upon manufacturing location.
R
300
qJA
Device
NTR4501NT1
NTR4501NT1G
NTR4501NT3
NTR4501NT3G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
http://onsemi.com
R
Typ
I
Max
DS(on)
D
(Note 1)
70 mW @ 4.5 V
3.6 A
88 mW @ 2.5 V
3.1 A
N−Channel
D
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
3
Drain
3
TR1 M G
G
2
1
Gate
Source
TR1
= Device Code
M
= Date Code*
G
= Pb−Free Package
ORDERING INFORMATION
Package
Shipping†
SOT−23
3000/Tape & Reel
SOT−23
3000/Tape & Reel
(Pb−Free)
SOT−23
10,000/Tape & Reel
SOT−23
10,000/Tape & Reel
(Pb−Free)
Publication Order Number:
NTR4501N/D

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NTR4501N Summary of contents

Page 1

... R qJA vary depending upon manufacturing location. R 300 qJA Device NTR4501NT1 NTR4501NT1G NTR4501NT3 NTR4501NT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com R Typ I Max DS(on) ...

Page 2

Electrical Characteristics (T = 25°C unless otherwise specified) J Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage (Note 3) Negative Threshold Temperature ...

Page 3

4 1.4 ...

Page 4

C 200 150 100 rss 0 0 2.5 5 7.5 10 12.5 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 100 3 4.5 V ...

Page 5

... L 0.10 0.20 0.30 0.004 0.008 L1 0.35 0.54 0.69 0.014 0.021 H 2.10 2.40 2.64 0.083 0.094 E STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN 2.0 mm inches ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTR4501N/D MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 ...

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